METHOD FOR FABRICATING SURFACE EMITTING LASER

• US 20170271839A1
• Filed: 03/13/2017
• Published: 09/21/2017
• Est. Priority Date: 03/15/2016
• Status: Abandoned Application

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: TSUJI, Yukihiro
• Application Number:
  US15/457,188
• Publication Number:
  US 20170271839A1
• Time in Patent Office: Days
• CPC Class Codes: H01S 2304/00 Special growth methods for semiconductor lasers
• CPC Class Codes: H01S 5/0203 Etching
• CPC Class Codes: H01S 5/0205 during growth of the semiconductor body
• CPC Class Codes: H01S 5/18344 characterized by the mesa, e.g. dimensions or shape of the mesa
• CPC Class Codes: H01S 5/2086 lateral etch control, e.g. mask induced
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs

Abstract

A method for fabricating a surface emitting laser includes the steps of: carrying out etching of a semiconductor laminate with a mask; and stopping the etching in response to a detection signal from an end point detector in an etching apparatus. The mask has a device area including device sections and an accessary area. The device area has an aperture ratio (OPD/SC) having a first value, the aperture ratio (OPD/SC) being defined as a total area (OPD) of an opening in each device section to an area (SC) of the device section. The accessary area has an aperture ratio having a second value configured to have substantially the same value as the first value, the aperture ratio of the accessary area being defined as an area of the opening pattern in a portion having an area, which is equal to the area of the device section, in the accessary area.

Claims

1. A method for fabricating a surface emitting laser comprising the steps of:

growing a semiconductor laminate on a substrate to form an epitaxial substrate;

forming a mask on the epitaxial substrate, the mask defining a semiconductor post of the surface emitting laser, the mask having a device area and an accessary area;

after forming the mask, placing the epitaxial substrate in a chamber of an etching apparatus with an end point detector;

carrying out etching of the semiconductor laminate with the mask in the chamber of the etching apparatus; and

stopping the etching of the semiconductor laminate in response to a detection signal from the end point detector in the etching apparatus,

wherein the device area includes a plurality of device sections arranged in row and column,

each of the device sections has an opening,

the device area has an aperture ratio (OPD/SC) having a first value,

the aperture ratio (OPD/SC) of the device area being defined as a total area (OPD) of the opening in each device section to an area (SC) of the device section,

the accessary area has an opening pattern,

the accessary area has an aperture ratio having a second value configured to have substantially the same value as the first value, the aperture ratio of the accessary area being defined as an area of the opening pattern in a portion having an area, which is equal to the area of the device section, in the accessary area.

2. The method according to claim 1, wherein each of the device sections in the device area includes a first opening having a closed shape defining a pattern for the semiconductor post,

the accessary area has an area larger than that of the device section, and

the second value is equal to or larger than a lower limit which is smaller by 0.02 with respect to the first value and is equal to or less than an upper limit which is larger by 0.02 with respect to the first value.

3. The method according to claim 2, wherein the device area includes a second opening different from the first opening disposed in each of the device sections.

4. The method according to claim 1, wherein the end point detector includes a spectrometer for monitoring an optical emission in the etching.

5. The method according to claim 1, wherein the etching is carried out by using an inductive-coupling plasma reactive-ion etching method.

6. The method according to claim 1, wherein the etching is carried out by using BCl₃ as an etchant.

7. The method according to claim 1, wherein the opening pattern in the accessary area includes a plurality of openings that defines an alignment mark.