SURFACE EMITTING QUANTUM CASCADE LASER
First Claim
1. A surface emitting quantum cascade laser comprising:
- an active layer with a plurality of quantum well layers stacked therein, the active layer being capable of emitting laser light by inter-subband transition;
a first semiconductor layer provided on the active layer and having a first surface provided with a plurality of pits so as to constitute a two-dimensional lattice; and
a first electrode provided on the first semiconductor layer and having a periodic opening,each pit being asymmetric with respect to a line parallel to a side of the lattice, andthe laser light being emitted in a direction generally perpendicular to the active layer from a pit exposed to the opening.
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Accused Products
Abstract
A surface emitting quantum cascade laser includes an active layer, a first semiconductor layer, and first electrode. The active layer has a plurality of quantum well layers stacked therein. The active layer is capable of emitting laser light by inter-subband transition. The first semiconductor layer is provided on the active layer and having a first surface provided with a plurality of pits so as to constitute a two-dimensional lattice. The first electrode is provided on the first semiconductor layer and having a periodic opening. Each pit is asymmetric with respect to a line parallel to a side of the lattice. The laser light is emitted in a direction generally perpendicular to the active layer from a pit exposed to the opening.
6 Citations
20 Claims
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1. A surface emitting quantum cascade laser comprising:
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an active layer with a plurality of quantum well layers stacked therein, the active layer being capable of emitting laser light by inter-subband transition; a first semiconductor layer provided on the active layer and having a first surface provided with a plurality of pits so as to constitute a two-dimensional lattice; and a first electrode provided on the first semiconductor layer and having a periodic opening, each pit being asymmetric with respect to a line parallel to a side of the lattice, and the laser light being emitted in a direction generally perpendicular to the active layer from a pit exposed to the opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A surface emitting quantum cascade laser comprising:
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an active layer with a plurality of quantum well structures stacked therein, the active layer being capable of emitting laser light by inter-subband transition; a first semiconductor layer provided on the active layer and having a first surface provided with a plurality of pits so as to constitute a two-dimensional lattice; an insulating film filled in the plurality of pits and having a thickness equal to depth of the pits; and a first electrode covering the first surface of the first semiconductor layer and an upper surface of the insulating film and reflecting the laser light to the active layer side, each pit being asymmetric with respect to a line parallel to one side of the two-dimensional lattice, and the laser light reflected by the first electrode passing through the active layer and being emitted in a direction generally perpendicular to the active layer. - View Dependent Claims (12, 13, 14, 15, 17, 18)
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16. A surface emitting quantum cascade laser comprising:
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an active layer with a plurality of quantum well structures stacked therein, the active layer being capable of emitting laser light by inter-subband transition; a first semiconductor layer provided on the active layer; and a first electrode provided on the first semiconductor layer and provided with a plurality of pits so as to constitute a two-dimensional lattice, each pit being asymmetric with respect to a line parallel to one side of the lattice, and the laser light having passed through the plurality of pits being emitted in a direction generally perpendicular to a surface of the first electrode. - View Dependent Claims (19, 20)
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Specification