SURFACE-EMITTING LASER ARRAY AND LASER DEVICE

• US 20170271851A1
• Filed: 02/24/2017
• Published: 09/21/2017
• Est. Priority Date: 03/17/2016
• Status: Abandoned Application

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: HANAOKA, Katsunari
• Application Number:
  US15/442,160
• Publication Number:
  US 20170271851A1
• Time in Patent Office: Days
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 5/0201 Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/187 using Bragg reflection
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A surface-emitting laser array and a laser device including the surface-emitting laser array. The surface-emitting laser array includes a layered product including a lower reflecting mirror having two layers with different refractive indexes, an upper reflecting mirror, and an active layer disposed between the lower reflecting mirror and the upper reflecting mirror, a first separation trench from which the upper reflecting mirror, the active layer, and the lower reflecting mirror are removed, the first separation trench separating the surface-emitting laser array from an adjacent chip, and a second separation trench disposed between the first separation trench and a light-emitting unit that emits a laser beam, the second separation trench having a prescribed depth.

Claims

1. A surface-emitting laser array comprising:

a layered product including

a lower reflecting mirror having two layers with different refractive indexes,

an upper reflecting mirror, and

an active layer disposed between the lower reflecting mirror and the upper reflecting mirror;

a first separation trench from which the upper reflecting mirror, the active layer, and the lower reflecting mirror are removed, the first separation trench separating the surface-emitting laser array from an adjacent chip; and

a second separation trench disposed between the first separation trench and a light-emitting unit that emits a laser beam, the second separation trench having a prescribed depth.

2. The surface-emitting laser array according to claim 1, wherein the second separation trench has a depth passing through the upper reflecting mirror, the active layer, and the lower reflecting mirror.

3. The surface-emitting laser array according to claim 1, wherein the second separation trench has a dielectric film on at least some of a wall of the second separation trench.

4. The surface-emitting laser array according to claim 3, wherein the second separation trench has a metal film disposed on at least some of the wall of the second separation trench having the dielectric film between the metal film and the wall of the second separation trench.

5. The surface-emitting laser array according to claim 4, wherein

the dielectric film is a silicon nitride film, and

the metal film is a gold film.

6. The surface-emitting laser array according to claim 1, wherein the second separation trench includes, at least partially, a filling material.

7. A laser device comprising

a surface-emitting laser array comprising:

a layered product including

a lower reflecting mirror having two layers with different refractive indexes,

an upper reflecting mirror, and

an active layer disposed between the lower reflecting mirror and the upper reflecting mirror;

a first separation trench from which the upper reflecting mirror, the active layer, and the lower reflecting mirror are removed, the first separation trench separating the surface-emitting laser array from an adjacent chip; and

a second separation trench disposed between the first separation trench and a light-emitting unit that emits a laser beam, the second separation trench having a prescribed depth.