SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A semiconductor memory device, comprising:
- a memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate;
a stepped part for contacting the plurality of conductive layers to a wiring line;
a contact extending in the first direction and being connected to the conductive layer in the stepped part; and
a plurality of columnar bodies extending in the first direction and penetrates the conductive layer in the stepped part and including a first columnar body having a first height and a second columnar body having a second height which is lower than the first height.
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Accused Products
Abstract
A semiconductor memory device according to an embodiment comprises: a memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate; a stepped part for contacting the plurality of conductive layers to a wiring line; a contact extending in the first direction and being connected to the conductive layer in the stepped part; and a plurality of columnar bodies extending in the first direction and penetrates the conductive layer in the stepped part and including a first columnar body having a first height and a second columnar body having a second height which is lower than the first height.
16 Citations
15 Claims
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1. A semiconductor memory device, comprising:
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a memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate; a stepped part for contacting the plurality of conductive layers to a wiring line; a contact extending in the first direction and being connected to the conductive layer in the stepped part; and a plurality of columnar bodies extending in the first direction and penetrates the conductive layer in the stepped part and including a first columnar body having a first height and a second columnar body having a second height which is lower than the first height. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor memory device, the semiconductor memory device comprising:
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a memory cell array region, the memory cell array region including a plurality of conductive layers that are electrically connected to a plurality of memory cells arranged in a first direction on a semiconductor substrate, the first direction intersecting a surface of the semiconductor substrate; a stepped part for contacting the plurality of conductive layers to a wiring line; a contact connected to the conductive layer in the stepped part; and a columnar body that extends in the first direction and penetrates the conductive layer in the stepped part, a plurality of the columnar bodies being provided, and the plurality of columnar bodies including a first columnar body and a second columnar body, the first columnar body having a first height, and the second columnar body having a second height which is lower than the first height, the method of manufacturing comprising; alternately stacking a plurality of insulating layers and first layers on the semiconductor substrate; forming ends of the insulating layer and the first layer in a stepped shape, thereby forming a first stepped part; forming a first hole that penetrates the plurality of insulating layers and first layers, the first hole being formed close to an extremity of one of steps configuring the first stepped part; forming a second layer in the first hole to form the second columnar body; alternately stacking a plurality of the insulating layers and the first layers on the first stepped part; forming in a stepped shape ends of a plurality of the insulating layers and first layers stacked on the first stepped part, thereby forming a second stepped part; forming a second hole that penetrates the plurality of insulating layers and first layers, the second hole being formed close to an extremity of one of steps configuring the second stepped part; forming a third layer in the second hole to form the first columnar body; forming a third hole closely adjacent to the first columnar body and the second columnar body; and forming a conductive film in the third hole to form the contact. - View Dependent Claims (12, 13, 14, 15)
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Specification