SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

• US 20170287624A1
• Filed: 06/15/2017
• Published: 10/05/2017
• Est. Priority Date: 11/13/2013
• Status: Abandoned Application

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: OSADA, Kosei, NISHIMURA, Isamu, KAGAWA, Tetsuya, YANAGISHIMA, Daiki, ISHIKAWA, Toshiyuki, MIFUJI, Michihiko, KAGEYAMA, Satoshi, KASAHARA, Nobuyuki
• Application Number:
  US15/624,205
• Publication Number:
  US 20170287624A1
• Time in Patent Office: Days
• CPC Class Codes: H01F 2027/2819 Planar transformers with printed windings, e.g. surrounded by two cores and to be mounted on printed circuit
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01F 27/288 Shielding
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/06135 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48195 the item being a discrete passive component
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/585 comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/10272 Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip

Abstract

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

Claims

1. A semiconductor device, comprising:

a low voltage element;

a high voltage element;

a transformer element including a low voltage coil electrically connected to the low voltage element and a high voltage coil electrically connected to the high voltage element, the transformer element capable of transferring a signal from the low voltage element to the high voltage element;

a resin package covering the low voltage element, the high voltage element and the transformer element; and

a plurality of terminals electrically connected to the low voltage element and the high voltage element, and exposed from the resin package.

2. The semiconductor device according to claim 1, wherein

the transformer element is smaller than the low voltage element and the high voltage element.

3. The semiconductor device according to claim 1, wherein

the transformer element is disposed between the low voltage element and the high voltage element.

4. The semiconductor device according to claim 1, wherein

the low voltage element includes a control circuit capable of controlling driving of a switching element disposed outside the semiconductor device, and

the high voltage element controls switching operation of the switching element based upon a signal transferred from the control circuit via the transformer element.

5. The semiconductor device according to claim 1, wherein

the transformer element is formed in a rectangular shape,

the semiconductor device includes a plurality of low voltage pad electrically connected the low voltage element and a plurality of high voltage pad electrically connected the high voltage element,

the plurality of low voltage pad are arranged along one long side of the transformer element, and

the plurality of high voltage pad are arranged along the other long side of the transformer element.