VARIABLE BURIED OXIDE THICKNESS FOR SILICON-ON-INSULATOR DEVICES
First Claim
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1. A radio-frequency device comprising:
- a silicon-on-insulator substrate including an insulator layer and a handle wafer; and
a plurality of field-effect transistors implemented over the insulator layer, each transistor separated from the handle wafer by a corresponding portion of the insulator layer, the corresponding portion of the insulator layer having an average thickness value such that the average thickness values associated with the plurality of transistors form a non-uniform distribution.
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Abstract
Variable buried oxide thickness for silicon-on-insulator devices. In some embodiments, a radio-frequency device can include a silicon-on-insulator substrate having an insulator layer and a handle wafer. The radio-frequency device can further include a plurality of field-effect transistors implemented over the insulator layer. Each transistor can be separated from the handle wafer by a corresponding portion of the insulator layer. The corresponding portion of the insulator layer can have an average thickness value such that the average thickness values associated with the plurality of FETs transistors form a non-uniform distribution.
22 Citations
27 Claims
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1. A radio-frequency device comprising:
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a silicon-on-insulator substrate including an insulator layer and a handle wafer; and a plurality of field-effect transistors implemented over the insulator layer, each transistor separated from the handle wafer by a corresponding portion of the insulator layer, the corresponding portion of the insulator layer having an average thickness value such that the average thickness values associated with the plurality of transistors form a non-uniform distribution. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a radio-frequency device, the method comprising:
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providing or forming a silicon-on-insulator substrate that includes an insulator layer and a handle wafer; and forming a plurality of field-effect transistors over the insulator layer, such that each transistor is separated from the handle wafer by a corresponding portion of the insulator layer, the corresponding portion of the insulator layer having an average thickness value such that the average thickness values associated with the plurality of transistors form a non-uniform distribution. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. (canceled)
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21. (canceled)
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22. A radio-frequency module comprising:
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a packaging substrate configured to receive a plurality of devices; and a switching device mounted on the packaging substrate, the switching device including a silicon-on-insulator substrate having an insulator layer and a handle wafer, the switching device further including a plurality of field-effect transistors implemented over the insulator layer, each transistor separated from handle wafer by a corresponding portion of the insulator layer, the corresponding portion of the insulator layer having an average thickness value such that the average thickness values associated with the plurality of transistors form a non-uniform distribution.
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23. (canceled)
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24. (canceled)
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25. (canceled)
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26. (canceled)
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27. (canceled)
Specification