THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY

• US 20170288029A1
• Filed: 09/10/2015
• Published: 10/05/2017
• Est. Priority Date: 10/03/2014
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: AMARI, Koichi
• Granted Patent: US 10,707,313 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 19/10 comprising field-effect transistors

Abstract

A thin film transistor includes a gate electrode, an insulation film disposed on the gate electrode, a semiconductor layer facing the gate electrode with the insulation film in between, and a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer. The first wiring layer is in contact with the semiconductor layer between the semiconductor layer and the insulation film, and is configured of a transparent electroconductive film. The second wiring layer is overlapped with a portion of the first wiring layer. Another semiconductor layer made of a material same as a material of the semiconductor layer is stacked on the second wiring layer.

Claims

1. A thin film transistor comprising:

a gate electrode;

an insulation film disposed on the gate electrode;

a semiconductor layer facing the gate electrode with the insulation film in between; and

a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer, the first wiring layer being in contact with the semiconductor layer between the semiconductor layer and the insulation film and being configured of a transparent electroconductive film, the second wiring layer being overlapped with a portion of the first wiring layer,

another semiconductor layer made of a material same as a material of the semiconductor layer being stacked on the second wiring layer.

2. The thin film transistor according to claim 1, wherein the first wiring layer is non-overlapped with an end part of the gate electrode in a plan view.

3. The thin film transistor according to claim 2, wherein the first wiring layer includes an end part that is disposed at a substantially same position as the end part of the gate electrode in the plan view.

4. The thin film transistor according to claim 1, wherein the second wiring layer is made of a metal.

5. The thin film transistor according to claim 1, wherein the second wiring layer has a thickness larger than a thickness of the semiconductor layer.

6. The thin film transistor according to claim 1, wherein the second wiring layer is non-overlapped with the semiconductor layer.

7. The thin film transistor according to claim 1, wherein the first wiring layer is covered with the semiconductor layer and the second wiring layer.

8. The thin film transistor according to claim 1, wherein the semiconductor layer is configured of an oxide semiconductor.

9. The thin film transistor according to claim 1, wherein the semiconductor layer is configured of an organic semiconductor.

10. A method of manufacturing a thin film transistor, the method comprising:

forming a gate electrode;

forming an insulation film on the gate electrode;

forming a semiconductor layer that faces the gate electrode with the insulation film in between;

forming a source-drain wiring layer that is electrically coupled to the semiconductor layer, wherein a first wiring layer and a second wiring layer are formed in this order as the source-drain wiring layer, the first wiring layer being made of a transparent electroconductive film, the second wiring layer being overlapped with a portion of the first wiring layer; and

forming the semiconductor layer after the forming of the second wiring layer.

11. The method of manufacturing the thin film transistor according to claim 10, wherein the first wiring layer is formed through photolithography, the photolithography including an exposure process that uses the gate electrode as a mask.

12. The method of manufacturing the thin film transistor according to claim 10, wherein the second wiring layer is made of a metal.

13. The method of manufacturing the thin film transistor according to claim 10, wherein a thickness of the second wiring layer is made larger than a thickness of the semiconductor layer.

14. The method of manufacturing the thin film transistor according to claim 10, wherein the first wiring layer is covered with the semiconductor layer and the second wiring layer.

15. The method of manufacturing the thin film transistor according to claim 10, wherein the semiconductor layer is configured of an oxide semiconductor.

16. The method of manufacturing the thin film transistor according to claim 10, wherein the semiconductor layer is configured of an organic semiconductor.

17. A display provided with a thin film transistor, the thin film transistor comprising:

a gate electrode;

an insulation film disposed on the gate electrode;

a semiconductor layer facing the gate electrode with the insulation film in between; and

a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer, the first wiring layer being in contact with the semiconductor layer between the semiconductor layer and the insulation film and being configured of a transparent electroconductive film, the second wiring layer being overlapped with a portion of the first wiring layer,

another semiconductor layer made of a material same as a material of the semiconductor layer being stacked on the second wiring layer.