Trenched MOS Gate Controlled Rectifier
First Claim
Patent Images
1. A semiconductor chip, comprisinga trench structure, comprising;
- a first trench with opening at a top surface of the chip having sidewalls of a epitaxial semiconductor material;
a second trench in the middle of the first trench, with opening at near the top surface, having sidewalls of dielectric material, and filled with a field plate; and
the field plate having adjacent gate electrode on one side and free of adjacent gate electrode on the opposite side.
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Abstract
A trenched MOS gate controlled rectifier has an asymmetric trench structure between the active area of active trenches and the termination area of termination trenches. The asymmetric trench structure has a gate electrode on one side of the trench to turn on and off the channel of the MOS structure effectively and a field plate structure on the other side with field dielectric sufficiently thick in order to sustain the high electric field during the reverse bias condition.
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Citations
21 Claims
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1. A semiconductor chip, comprising
a trench structure, comprising; -
a first trench with opening at a top surface of the chip having sidewalls of a epitaxial semiconductor material; a second trench in the middle of the first trench, with opening at near the top surface, having sidewalls of dielectric material, and filled with a field plate; and the field plate having adjacent gate electrode on one side and free of adjacent gate electrode on the opposite side. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A process of making an asymmetric trench in a semiconductor chip, comprising:
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lining sidewalls of a trench in the chip with a dielectric layer; covering the dielectric layer on one sidewall and exposing the dielectric layer on the opposite sidewall; and removing portion of the exposed dielectric layer.
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11. A semiconductor device, comprising:
a semiconductor chip having an asymmetric trench structure, comprising; a first trench having semiconductor sidewalls; a second trench having dielectric sidewalls and disposed inside the first trench; and a third trench having dielectric sidewalls and disposed inside the first trench and outside the second trench. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
Specification