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Trenched MOS Gate Controlled Rectifier

  • US 20170288065A1
  • Filed: 04/01/2016
  • Published: 10/05/2017
  • Est. Priority Date: 04/01/2016
  • Status: Active Grant
First Claim
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1. A semiconductor chip, comprisinga trench structure, comprising;

  • a first trench with opening at a top surface of the chip having sidewalls of a epitaxial semiconductor material;

    a second trench in the middle of the first trench, with opening at near the top surface, having sidewalls of dielectric material, and filled with a field plate; and

    the field plate having adjacent gate electrode on one side and free of adjacent gate electrode on the opposite side.

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