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DIODE STRUCTURES WITH CONTROLLED INJECTION EFFICIENCY FOR FAST SWITCHING

  • US 20170288066A1
  • Filed: 06/20/2017
  • Published: 10/05/2017
  • Est. Priority Date: 01/31/2011
  • Status: Abandoned Application
First Claim
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1. A diode device disposed in a semiconductor substrate comprising:

  • a heavily doped bottom layer of a first conductivity type supporting a lower buffer layer of the first conductivity type above the heavily doped bottom layer of a first conductivity type;

    an upper buffer layer of the first conductivity type disposed below a top anode layer of a second conductivity type wherein the upper buffer layer is more heavily doped than the lower buffer layer to function as an ejection efficiency controlling buffer layer; and

    a middle lightly doped buffer layer of the first conductivity type disposed between the upper buffer layer and the lower buffer layer of the first conductivity type.

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