SEMICONDUCTOR PACKAGE STRUCTURE, PACKAGE ON PACKAGE STRUCTURE AND PACKAGING METHOD
First Claim
1. A semiconductor package structure, comprising:
- a substrate having a first surface and a second surface opposite to the first surface and a first coefficient of thermal expansion CTE1;
a first semiconductor device disposed adjacent to the first surface of the substrate;
a first encapsulant disposed on the first surface of the substrate, covering at least a portion of the first semiconductor device, and having a second coefficient of thermal expansion CTE2; and
a second encapsulant disposed on the second surface of the substrate and having a third coefficient of thermal expansion CTE3,wherein a difference between CTE1 and CTE2 is substantially equal to a difference between CTE1 and CTE3.
1 Assignment
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Accused Products
Abstract
A semiconductor package structure includes a substrate, a first semiconductor device, a first encapsulant and a second encapsulant. The substrate has a first coefficient of thermal expansion CTE1. The first semiconductor device is disposed adjacent to a first surface of the substrate. The first encapsulant is disposed on the first surface of the substrate, and covers at least a portion of the first semiconductor device. The first encapsulant has a second coefficient of thermal expansion CTE2. The second encapsulant is disposed on a second surface of the substrate and has a third coefficient of thermal expansion CTE3. A difference between CTE1 and CTE2 is substantially equal to a difference between CTE1 and CTE3.
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Citations
22 Claims
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1. A semiconductor package structure, comprising:
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a substrate having a first surface and a second surface opposite to the first surface and a first coefficient of thermal expansion CTE1; a first semiconductor device disposed adjacent to the first surface of the substrate; a first encapsulant disposed on the first surface of the substrate, covering at least a portion of the first semiconductor device, and having a second coefficient of thermal expansion CTE2; and a second encapsulant disposed on the second surface of the substrate and having a third coefficient of thermal expansion CTE3, wherein a difference between CTE1 and CTE2 is substantially equal to a difference between CTE1 and CTE3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A package on package structure, comprising:
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a bottom package, comprising; a bottom substrate having a first surface and a second surface opposite to the first surface and having a first coefficient of thermal expansion CTE1; a first semiconductor device disposed adjacent to the first surface of the bottom substrate; a first encapsulant disposed on the first surface of the bottom substrate, covering at least a portion of the first semiconductor device, and having a second coefficient of thermal expansion CTE2; and a second encapsulant disposed on the second surface of the bottom substrate and having a third coefficient of thermal expansion CTE3, wherein a difference between CTE1 and CTE2 is substantially equal to a difference between CTE1 and CTE3; and a top package disposed on and electrically connected to the bottom package, and comprising; a top substrate having a first surface and a second surface opposite to the first surface, and having a sixth coefficient of thermal expansion CTE6; a top semiconductor device disposed adjacent to the first surface of the top substrate; and a top encapsulant disposed on the first surface of the top substrate, covering at least a portion of the top semiconductor device, and having a seventh coefficient of thermal expansion CTE7, wherein CTE7 is substantially equal to CTE6. - View Dependent Claims (14, 15, 16, 17)
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18. A packaging method, comprising:
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providing a substrate having a first surface and a second surface opposite to the first surface, and having a first coefficient of thermal expansion CTE1; mounting a first semiconductor device on the first surface of the substrate; disposing a first encapsulant on the first surface of the substrate and a second encapsulant on the second surface of the substrate, wherein the first encapsulant covers at least a portion of the first semiconductor device and has a second coefficient of thermal expansion CTE2, the second encapsulant has a third coefficient of thermal expansion CTE3, and a difference between CTE1 and CTE2 is substantially equal to a difference between CTE1 and CTE3; and defining a first opening corresponding to a first connection pad disposed adjacent to the first surface of the substrate and a second opening corresponding to a second connection pad disposed adjacent to the second surface of the substrate. - View Dependent Claims (19, 20, 21, 22)
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Specification