MULTI-WAFER BASED LIGHT ABSORPTION APPARATUS AND APPLICATIONS THEREOF
First Claim
1. A method for fabricating a photodetector using a donor wafer and a carrier wafer, the method comprising:
- forming a photosensitive material layer on a front side of the donor wafer;
forming a passivation layer on top of the photosensitive material layer;
performing a wafer bonding process to bond together the donor wafer and the carrier wafer, the passivation layer facing a front side of the carrier wafer; and
removing at least a part of threading dislocation density (TDD) defects near an interface between the photosensitive material layer and a substrate of the donor wafer by removing at least a portion of a back side of the donor wafer.
2 Assignments
0 Petitions
Accused Products
Abstract
Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs'"'"' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.
8 Citations
21 Claims
-
1. A method for fabricating a photodetector using a donor wafer and a carrier wafer, the method comprising:
-
forming a photosensitive material layer on a front side of the donor wafer; forming a passivation layer on top of the photosensitive material layer; performing a wafer bonding process to bond together the donor wafer and the carrier wafer, the passivation layer facing a front side of the carrier wafer; and removing at least a part of threading dislocation density (TDD) defects near an interface between the photosensitive material layer and a substrate of the donor wafer by removing at least a portion of a back side of the donor wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A semiconductor structure comprising:
-
a first silicon wafer having a front side; a photosensitive material layer deposited on the front side of the first silicon wafer, the photosensitive material layer including a number of SixGe(1-x) layers, wherein 0≦
x<
1;a silicon passivation layer on top of the photosensitive material layer; and a second silicon wafer having a front side, wherein the first silicon wafer and the second silicon wafer is bonded together with the silicon passivation layer facing the front side of the second silicon wafer.
-
Specification