LIGHT-EMITTING DEVICE

• US 20170294566A1
• Filed: 04/07/2017
• Published: 10/12/2017
• Est. Priority Date: 04/08/2016
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: HSIEH, Min-Hsun, YU, Jen-Chieh, KE, Wei-Fan
• Granted Patent: US 10,177,290 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/1312 Antimony [Sb] as principal constituent
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.

Claims

1. A light-emitting device, comprising:

a semiconductor stack comprising a side surface, a first bottom surface and a first upper surface opposing to the first bottom surface;

an electrode formed on the first bottom surface to be electrically connected to the semiconductor stack;

an electrode post formed on the electrode;

a reflective insulating layer surrounding the electrode post and comprising a second bottom surface being coplanar with the electrode post;

an extending electrode formed on the first upper surface; and

a supporting structure formed on the extending electrode.

2. The light-emitting device according to claim 1, wherein the semiconductor stack comprises Al_xIn_yGa_(1-x-y)P.

3. The light-emitting device according to claim 1, wherein the electrode post comprises tin-antimony alloy.

4. The light-emitting device according to claim 1, wherein the supporting structure comprises a wavelength conversion material.

5. The light-emitting device according to claim 1, wherein the supporting structure covers the side surface and the first top surface.

6. The light-emitting device according to claim 1, wherein the reflective insulating layer surrounds the semiconductor stack.

7. The light-emitting device according to claim 1, wherein the supporting structure includes glass.

8. The light-emitting device according to claim 1, wherein the supporting structure includes silicone or epoxy.

9. The light-emitting device according to claim 1, wherein the light emitting device has a height H1, and the supporting structure has a height H2, and a ratio of H1/H2 is less than 1.5.

10. The light-emitting device according to claim 1, further comprising a light emitted from the semiconductor stack and traveling along a direction away from the extending electrode.