COMBINED ANNEAL AND SELECTIVE DEPOSITION SYSTEMS

• US 20170298503A1
• Filed: 04/18/2016
• Published: 10/19/2017
• Est. Priority Date: 04/18/2016
• Status: Abandoned Application

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: MAES, Jan Willem, KNAEPEN, Werner
• Application Number:
  US15/132,084
• Publication Number:
  US 20170298503A1
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/0209 by heating
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/36 Carbonitrides
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process

Abstract

A system and a method for forming a film with an annealing step and a deposition step is disclosed. The system performs an annealing step for inducing self-assembly or alignment within a polymer. The system also performs a selective deposition step in order to enable selective deposition on a polymer.

Claims

1. A system configured to selectively form a film comprising:

a first batch reaction chamber, the first batch reaction chamber configured to hold at least one substrate having at least one polymer layer;

a heating element configured to perform an annealing step on the at least one substrate; and

a gas precursor delivery system, the gas precursor delivery system configured to perform a film deposition by sequentially pulsing a first precursor and a second precursor onto the at least one substrate, the film deposition being configured to enable infiltration of at least the first precursor into the at least one polymer layer;

wherein a film or a material forms on the at least one polymer layer; and

wherein the annealing step and the film deposition take place without exposure to ambient air.

2. The system of claim 1, wherein the film comprises at least one of:

aluminum oxide (Al₂O₃), silicon dioxide (SiO₂), silicon nitride (SiN), silicon oxynitride (SiON), silicon carbonitride (SiCN), aluminum nitride (AIN), titanium nitride (TiN), tantalum nitride (TaN), tungsten (W), cobalt (Co), titanium dioxide (TiO2), tantalum oxide (Ta₂O₅), zirconium dioxide (ZrO₂), or hafnium dioxide (HfO₂).

3. The system of claim 1, wherein the first batch reaction chamber is configured to process multiple substrates.

4. The system of claim 1, wherein the first batch reaction chamber is configured to perform the annealing step.

5. The system of claim 1, further comprising a batch second reaction chamber configured to hold at least one substrate having at least one polymer layer.

6. The system of claim 5, wherein the first reaction chamber performs the annealing step and the second reaction chamber performs the film deposition.

7. The system of claim 6, wherein the first batch reaction chamber performs the film deposition and the second reaction chamber performs the annealing step.

8. The system of claim 6, wherein the at least one substrate is transferred from the first batch reaction chamber to the second batch reaction chamber along with at least a second substrate in a multiple substrate holder.

9. A system configured to selectively form a film or material comprising:

a first batch reaction chamber, the first batch reaction chamber configured to hold at least a first substrate having at least one polymer layer;

a second batch reaction chamber, the second batch reaction chamber configured to hold at least a second substrate having at least one polymer layer;

a first heating element associated with the first batch reaction chamber and configured to perform an annealing step on the first substrate;

a second heating element associated with the second batch reaction chamber and configured to perform an annealing step on the second substrate; and

a gas precursor delivery system, the gas precursor delivery system configured to deposit a film by sequentially pulsing a first precursor and a second precursor onto the first substrate and the second substrate, wherein at least the first precursor infiltrates into the at least one polymer layer;

wherein the annealing step and the film deposition take place without exposure to ambient air.

10. The system of claim 9, wherein the first reaction chamber is configured to process multiple substrates.

11. The system of claim 9, wherein the second reaction chamber is configured to process multiple substrates.

12. The system of claim 9, wherein the at least one substrate is transferred from the first batch reaction chamber to the second batch reaction chamber along with at least a second substrate in a multiple substrate holder.