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METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

  • US 20170301731A1
  • Filed: 07/06/2017
  • Published: 10/19/2017
  • Est. Priority Date: 02/24/2014
  • Status: Active Grant
First Claim
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1. A method for producing a memory device, the method comprising:

  • a sixth step of forming pillar-shaped phase change layers and lower electrodes arranged in two or more rows and two or more columns on a semiconductor substrate, forming a reset gate insulating film that surrounds the pillar-shaped phase change layers and the lower electrodes, and forming a reset gate that surrounds the pillar-shaped phase change layers that function as memory devices arranged in two or more rows and two or more columns.

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