FinFET with Trench Field Plate
First Claim
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1. An integrated circuit device, comprising:
- a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type;
a gate over a top surface of the pad layer, the gate overlapping an interface between the body portion and the drift region portion, the gate extending into the pad layer;
a dielectric material on opposing sides of the gate, the dielectric material extending to a bottom of the gate; and
a first field plate embedded in the dielectric material on a first side of the gate, the dielectric material being interposed between the first field plate and the gate.
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Abstract
An integrated circuit device includes a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type, a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion, a gate formed in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion, an oxide formed in the trench on opposing sides of the gate, and a field plate embedded in the oxide on each of the opposing sides of the gate.
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Citations
20 Claims
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1. An integrated circuit device, comprising:
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a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type; a gate over a top surface of the pad layer, the gate overlapping an interface between the body portion and the drift region portion, the gate extending into the pad layer; a dielectric material on opposing sides of the gate, the dielectric material extending to a bottom of the gate; and a first field plate embedded in the dielectric material on a first side of the gate, the dielectric material being interposed between the first field plate and the gate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An integrated circuit device, comprising:
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a substrate; a pad layer over the substrate, the pad layer having a body region with a first doping type laterally adjacent to a drift region with a second doping type; a gate overlapping the body region and the drift region, the gate extending into the pad layer; a first dielectric material between a first side of the gate and a portion of the drift region; a second dielectric material between a second side of the gate and a portion of the body region; and a first field plate embedded in the first dielectric material, wherein the first dielectric material is interposed between the first field plate and gate. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. An integrated circuit device, comprising:
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a body region having a first doping type; a drift region adjacent the body region, the drift region having a second doping type; a gate over a portion of a top surface of the body region and over a portion of a top surface of the drift region, the gate extending along a sidewall of the drift region and a sidewall of the body region; a first dielectric material interposed between the gate and the drift region; a second dielectric material interposed between the gate and the body region; and a first field plate in the first dielectric material. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification