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Engineered Substrate Including Light Emitting Diode and Power Circuitry

  • US 20170309676A1
  • Filed: 04/19/2017
  • Published: 10/26/2017
  • Est. Priority Date: 04/22/2016
  • Status: Active Application
First Claim
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1. A gallium nitride based integrated circuit architecture comprising:

  • a first electronic device including a first set of III-N epitaxial layers;

    a second electronic device including a second set of III-N epitaxial layers; and

    one or more interconnects between the first electronic device and the second electronic device, wherein the first electronic device and the second electronic device are disposed in a chip scale package.

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