ETCHING SUBSTRATES USING ALE AND SELECTIVE DEPOSITION
First Claim
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1. A method of processing substrates, the method comprising:
- (a) exposing a substrate comprising a first carbon-containing material to an oxidant and igniting a first plasma with a first bias power to modify a surface of the first carbon-containing material; and
(b) exposing the modified layer to a second plasma at a second bias power and for a duration sufficient to remove the modified surface without sputtering.
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Abstract
Methods of and apparatuses for processing substrates having carbon-containing material using atomic layer deposition and selective deposition are provided. Methods involve exposing a carbon-containing material on a substrate to an oxidant and igniting a first plasma at a first bias power to modify a surface of the substrate and exposing the modified surface to an inert plasma at a second bias power to remove the modified surface. Methods also involve selectively depositing a second carbon-containing material onto the substrate. ALE and selective deposition may be performed without breaking vacuum.
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Citations
26 Claims
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1. A method of processing substrates, the method comprising:
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(a) exposing a substrate comprising a first carbon-containing material to an oxidant and igniting a first plasma with a first bias power to modify a surface of the first carbon-containing material; and (b) exposing the modified layer to a second plasma at a second bias power and for a duration sufficient to remove the modified surface without sputtering. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. An apparatus for processing a substrate, the apparatus comprising:
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(a) one or more process chambers, each process chamber comprising a chuck; one or more gas inlets into the process chambers and associated flow-control hardware; and (b) a controller having at least one processor and a memory, wherein the at least one processor and the memory are communicatively connected with one another, the at least one processor is at least operatively connected with the flow-control hardware, and the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware by; (i) introducing an oxidant to the process chamber and igniting a first plasma at a first bias power; and (ii) introducing a first inert gas and igniting a second plasma at a second bias power, wherein (i) and (ii) are performed without breaking vacuum. - View Dependent Claims (26)
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Specification