METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
First Claim
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1. A method for manufacturing a semiconductor structure, the method comprising:
- forming a first dielectric layer on a gate structure and a source drain structure;
forming a recess at least partially in the first dielectric layer;
forming a protection layer at least on a sidewall of the recess;
deepening the recess to expose the source drain structure;
forming a bottom conductor in the recess, wherein the bottom conductor is electrically connected to the source drain structure; and
removing the protection layer to form a gap between the bottom conductor and the sidewall of the recess.
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Abstract
A method for manufacturing a semiconductor structure includes forming a first dielectric layer on a gate structure and a source drain structure. A recess is formed at least partially in the first dielectric layer. A protection layer is formed at least on a sidewall of the recess. The recess is deepened to expose the source drain structure. A bottom conductor is formed in the recess and is electrically connected to the source drain structure. The protection layer is removed to form a gap between the bottom conductor and the sidewall of the recess.
12 Citations
20 Claims
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1. A method for manufacturing a semiconductor structure, the method comprising:
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forming a first dielectric layer on a gate structure and a source drain structure; forming a recess at least partially in the first dielectric layer; forming a protection layer at least on a sidewall of the recess; deepening the recess to expose the source drain structure; forming a bottom conductor in the recess, wherein the bottom conductor is electrically connected to the source drain structure; and removing the protection layer to form a gap between the bottom conductor and the sidewall of the recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor structure, the method comprising:
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forming a first opening in a first dielectric layer to expose a source drain structure; forming a bottom conductor in the first opening such that the bottom conductor is electrically connected to the source drain structure; forming a gap around the bottom conductor; and forming an upper conductor on the bottom conductor, wherein the upper conductor is formed to cap a top opening of the gap. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a semiconductor structure, the method comprising:
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forming a first dielectric layer on a gate structure and a source drain structure; forming a recess at least partially in the first dielectric layer; forming a protection layer at least on a sidewall of the recess; deepening the recess to expose the source drain structure; overfilling a conductive material in the recess; and removing the conductive material, the protection layer, and the first dielectric layer above the gate structure. - View Dependent Claims (17, 18, 19, 20)
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Specification