ETCHING SOLUTION CAPABLE OF SUPPRESSING PARTICLE APPEARANCE

• US 20170321121A1
• Filed: 05/02/2017
• Published: 11/09/2017
• Est. Priority Date: 05/04/2016
• Status: Active Grant

• Current Assignee: OCI Company Limited (OCI Holdings Co. Ltd.)
• Original Assignee: OCI Company Limited (OCI Holdings Co. Ltd.)
• Inventors: Yoo, Hoseong, Han, Seunghyun, Chang, Wook, Kim, Yongil
• Granted Patent: US 10,167,425 B2
• Time in Patent Office: Days
• CPC Class Codes: C01B 7/19 Fluorine; Hydrogen fluoride
• CPC Class Codes: C07C 69/02 Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen
• CPC Class Codes: C07C 69/34 Esters of acyclic saturated polycarboxylic acids having an esterified carboxyl group bound to an acyclic carbon atom
• CPC Class Codes: C09K 13/08 containing a fluorine compound
• CPC Class Codes: H01L 21/02019 Chemical etching
• CPC Class Codes: H01L 21/0206 during, before or after processing of insulating layers
• CPC Class Codes: H01L 21/31111 by chemical means

Abstract

The present disclosure relates to an etching solution capable of suppressing particle appearance including a first silane compound in which three or more hydrophilic functional groups are independently bonded to a silicon atom and a second silane compound in which one or two hydrophilic functional groups are independently bonded to a silicon atom. n

Claims

1. An etching solution for suppressing particle appearance comprising:

an aqueous solution including at least one acid of an inorganic acid and an organic acid;

a first silane compound including 1 to 6 silicon atoms where at least one silicon atom is bonded to three or more hydrophilic functional groups;

a second silane compound including 1 to 6 silicon atoms where the number of hydrophilic functional groups bonded to one silicon atom is a maximum of 2; and

a fluorine-containing compound.

2. The etching solution capable of suppressing particle appearance of claim 1, wherein the inorganic acid is at least one selected from sulfuric acid, nitric acid, phosphoric acid, silicic acid, hydrofluoric acid, boric acid, hydrochloric acid, perchloric acid, phosphoric acid anhydride, pyrophosphoric acid, and polyphosphoric acid.

3. The etching solution capable of suppressing particle appearance of claim 1, wherein the organic acid is at least one selected from acetic acid, citric acid, formic acid, gluconic acid, lactic acid, oxalic acid, tartaric acid, and hydrogen carbonic acid.

4. The etching solution capable of suppressing particle appearance of claim 1, wherein the hydrophilic functional group is a hydroxyl or a functional group substitutable with a hydroxyl group under a pH condition of the etching solution

5. The etching solution capable of suppressing particle appearance of claim 4, wherein the functional group substitutable with a hydroxy group under a pH condition of the etching solution is selected from an amino group, a halogen group, a sulfonic group, a phosphonic group, a phosphoric group, a thiol group, an alkoxy group, an amide group, an ester group, an acid anhydride group, an acyl halide group, a cyano group, a carboxyl group, and an azole group.

6. The etching solution capable of suppressing particle appearance of claim 1, wherein the first silane compound is represented by Chemical Formula 1 below or Chemical Formula 2 below:

7. The etching solution capable of suppressing particle appearance of claim 6, wherein the hydrophilic functional group is selected from a hydroxyl group, an amino group, a halogen group, a sulfonic group, a phosphonic group, a phosphoric group, a thiol group, an alkoxy group, an amide group, an ester group, an acid anhydride group, an acyl halide group, a cyano group, a carboxyl group, and an azole group.

8. The etching solution capable of suppressing particle appearance of claim 1, wherein the first silane compound has a concentration of 100 to 10,000 ppm in the etching solution.

9. The etching solution capable of suppressing particle appearance of claim 1, wherein the second silane compound is represented by Chemical Formula 3 below or Chemical Formula 4 below:

10. The etching solution capable of suppressing particle appearance of claim 9, wherein the hydrophilic functional group is selected from a hydroxyl group, an amino group, a halogen group, a sulfonic group, a phosphonic group, a phosphoric group, a thiol group, an alkoxy group, an amide group, an ester group, an acid anhydride group, an acyl halide group, a cyano group, a carboxyl group, and an azole group.

11. The etching solution capable of suppressing particle appearance of claim 1, wherein the second silane compound has a concentration of 100 to 30,000 ppm in the etching solution.

12. The etching solution capable of suppressing particle appearance of claim 1, wherein the fluorine-containing compound is at least one selected from hydrogen fluoride, ammonium fluoride, ammonium bifluoride, and ammonium hydrogen fluoride.

13. The etching solution capable of suppressing particle appearance of claim 1, wherein the fluorine-containing compound is a compound in which an organic cation and a fluorine-based anion are ionically bonded.

14. The etching solution capable of suppressing particle appearance of claim 13, wherein the organic cation is selected from alkylammonium, alkylpyrrolium, alkylimidazolium, alkylpyrazolium, alkyloxazolium, alkylthiazolium, alkylpyridinium, alkylpyrimidinium, alkylpyridazinium, alkylpyrazinium, alkylpyrrolidinium, alkylphosphonium, alkylmorpholinium, and alkylpiperidinium.

15. The etching solution capable of suppressing particle appearance of claim 13, wherein the fluorine-based anion is selected from fluoride, fluorophosphate, fluoroalkyl-fluorophosphate, fluoroborate, and fluoroalkyl-fluoroborate.