SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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Abstract
A transistor including an oxide semiconductor, which has good on-state characteristics, and a high-performance semiconductor device including a transistor capable of high-speed response and high-speed operation. In the transistor including an oxide semiconductor, oxygen-defect-inducing factors are introduced (added) into an oxide semiconductor layer, whereby the resistance of a source and drain regions are selectively reduced. Oxygen-defect-inducing factors are introduced into the oxide semiconductor layer, whereby oxygen defects serving as donors can be effectively formed in the oxide semiconductor layer. The introduced oxygen-defect-inducing factors are one or more selected from titanium, tungsten, and molybdenum, and are introduced by an ion implantation method.
20 Citations
4 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device comprising:
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forming a first oxide semiconductor layer by a sputtering method; crystallizing a region of the first oxide semiconductor layer by a first heat treatment, the region including a surface of the first oxide semiconductor layer; forming a second oxide semiconductor layer over the first oxide semiconductor layer by a sputtering method; crystallizing the second oxide semiconductor layer by a second heat treatment; wherein the second oxide semiconductor layer includes In, Ga, and Zn, and wherein the second oxide semiconductor layer includes a crystal whose c-axis is aligned in a direction perpendicular to a surface of the second oxide semiconductor layer. - View Dependent Claims (3)
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4. A semiconductor device comprising:
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a first oxide semiconductor layer; and a second oxide semiconductor layer over the first oxide semiconductor layer, wherein the second oxide semiconductor layer includes In, Ga, and Zn, wherein the first oxide semiconductor layer is a first non-single crystalline layer including a crystal, and wherein the second oxide semiconductor layer is a second non-single crystalline layer including a crystal whose c-axis is aligned in a direction perpendicular to a surface of the second oxide semiconductor layer.
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Specification