DUAL LAYER PHOTOVOLTAIC DEVICE

• US 20170323993A1
• Filed: 10/27/2015
• Published: 11/09/2017
• Est. Priority Date: 10/28/2014
• Status: Abandoned Application

• Current Assignee: Sol Voltaics AB
• Original Assignee: Sol Voltaics AB
• Inventors: BJRK, Mikael, OHLSSON, Jonas, SAMUELSON, Lars, SAUAR, Erik, BERG, Ingvar
• Application Number:
  US15/522,238
• Publication Number:
  US 20170323993A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 31/0201 comprising specially adapted module bus-bar structures
• CPC Class Codes: H01L 31/022433 Particular geometry of the grid contacts
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/02966 including ternary compounds, e.g. HgCdTe
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/043 Mechanically stacked PV cells
• CPC Class Codes: H01L 31/046 PV modules composed of a plurality of thin film solar cells deposited on the same substrate
• CPC Class Codes: H01L 31/0504 specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/0693 the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
• CPC Class Codes: H01L 31/0725 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/078 including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A hybrid photovoltaic device (1) comprising a thin film solar cell (2) disposed in a first layer (21) comprising an array of vertically aligned nanowires (25), said nanowires having a junction with a first band gap corresponding to a first spectral range. The nanowires (25) form absorbing regions, and non-absorbing regions are formed between the nanowires. A bulk solar cell (3) s disposed in a second layer (31), positioned below the first layer (21), having a junction with a second band gap, which is smaller than said first band gap and corresponding to a second spectral range. The nanowires are provided in the first layer with a lateral density selected a such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range.

Claims

1. A hybrid photovoltaic device comprising

a thin film solar cell disposed in a first layer comprising an array of vertically aligned nanowires, said nanowires having a junction with a first band gap corresponding to a first spectral range, wherein said nanowires form absorbing regions, and non-absorbing regions are formed between the nanowires, wherein the nanowires are connected on one side of the junction to a top transparent electrode, and on the other side to the bottom transparent electrode;

a bulk solar cell disposed in a second layer, positioned below the first layer, having a junction with a second band gap, which is smaller than said first band gap and corresponding to a second spectral range;

a transparent cover disposed above the thin film solar cell;

wherein the nanowires are provided in the first layer with a lateral density selected a such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range.

2. The hybrid photovoltaic device of claim 1, wherein

the top electrode of the thin film solar cell is attached to the transparent cover.

3. The hybrid photovoltaic device of claim 1, wherein the thin film solar cell layer is adhered onto the bulk solar cell.

4. The hybrid photovoltaic device of claim 1, wherein the bulk solar cell comprises an upper electrode which is separate from, and arranged in galvanic connection with, the lower thin film electrode.

5. The hybrid photovoltaic device of claim 4, wherein said upper electrode includes a bus bar with fingers.

6. The hybrid photovoltaic device of claim 4, comprising a conductive layer positioned between the first layer and the second layer, galvanically connecting the lower electrode of the thin film solar cell with the upper electrode of the bulk solar cell.

7. The hybrid photovoltaic device of claim 4, wherein a first connector grid structure is connected to the upper electrode of the thin film solar cell, and wherein said galvanic connection comprises a second grid structure, and wherein said first and second grid structures substantially overlap vertically.

8. The hybrid photovoltaic device of claim 7, wherein said second grid structure forms the upper electrode of the bulk solar cell and is connected to the lower electrode of the thin film solar cell.

9. The hybrid photovoltaic device of claim 7, wherein the galvanic connection is non-epitaxial.

10. The hybrid photovoltaic device of claim 1, wherein the thin film solar cell is serially connected to the bulk solar cell through said galvanic connection.

11. The hybrid photovoltaic device of claim 10, wherein said galvanic connection also connects to an upper electrode of a second bulk solar cell such that said bulk solar cells are connected in parallel to each other and in series to said thin film solar cell, so as to contribute to the photocurrent matching between the thin film solar cell and the bulk solar cells.

12. The hybrid photovoltaic device of claim 10, wherein a first number of thin film solar cells are serially interconnected into a first string of thin film cells, and a second number of bulk solar cells are serially interconnected into a second string of bulk solar cells, which first and second strings are connected in parallel, and wherein said numbers of cells in the strings are adapted so as to contribute to voltage matching between said strings.

13. The hybrid photovoltaic device of claim 1, wherein the lateral density of nanowires is selected so as to obtain current matching between photocurrent generated in the thin film solar cell and photocurrent generated in the bulk material solar cell.

14. The hybrid photovoltaic device of claim 1, wherein the material of the nanowires in the film cell is a direct band gap semiconductor such as, GaAs, AlGaAs, InP, or alloys thereof, and wherein the bulk solar cell is made of Si or CIGS.

15. The hybrid photovoltaic device of claim 1, wherein the junction of the bulk solar cell extends laterally under said array of nanowires.

16. A method for increasing energy conversion of a bulk solar cell disposed in a layer, comprising the step of

providing a thin film solar cell disposed in a first layer comprising an array of vertically aligned nanowires, said nanowires having a junction with a first band gap which is larger than a band gap of the bulk solar cell, wherein said nanowires form absorbing regions with non-absorbing regions between the nanowires;

wherein the nanowires are connected on one side of the junction to a top transparent electrode, and on the other side to the bottom transparent electrode;

arranging the thin film solar cell layer on top of the bulk solar cell to form a hybrid photovoltaic device, wherein the nanowires in the first layer are provided with a lateral density selected such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range; and

providing a transparent cover above the thin film solar cell.

17. The method of claim 16, comprising the step of attaching the top electrode of the thin film solar cell to the transparent cover.

18. The method of claim 16, comprising the step of

providing a conductive layer between the bulk solar cell layer and the thin film solar cell layer;

and

galvanically connecting a lower electrode of the thin film solar cell with an upper electrode of the bulk solar cell by means of the conductive layer.