DATA WRITING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE
First Claim
1. A data writing method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and each of the physical erasing unit comprises a plurality of physical programming units, the data writing method comprising:
- receiving a first write command from a host system and storing data corresponding to the first write command into a buffer memory; and
writing the data corresponding to the first write command from the buffer memory to at least one first physical programming unit of a first physical erasing unit among the physical erasing units by using a single page programming mode if a write cache function is disabled and the data corresponding to the first write command is stored into the buffer memory,wherein the at least one first physical programming unit is constituted by a plurality of first memory cells and each of the first memory cells only stores one bit of data in the single page programming mode.
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Accused Products
Abstract
A data writing method, a memory control circuit unit and a memory storage device are provided. The method includes: receiving a first write command and writing data corresponding to the first write command into a buffer memory; and writing the data corresponding to the first write command from the buffer memory to at least one first physical programming unit of a first physical erasing unit by using a single page programming mode if a write cache function is disabled and the data of the first write command is stored into the buffer memory, in which the at least one first physical programming unit is constituted by a plurality of first memory cells and each of the first memory cells only stores one bit of data in the single page programming mode.
12 Citations
24 Claims
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1. A data writing method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and each of the physical erasing unit comprises a plurality of physical programming units, the data writing method comprising:
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receiving a first write command from a host system and storing data corresponding to the first write command into a buffer memory; and writing the data corresponding to the first write command from the buffer memory to at least one first physical programming unit of a first physical erasing unit among the physical erasing units by using a single page programming mode if a write cache function is disabled and the data corresponding to the first write command is stored into the buffer memory, wherein the at least one first physical programming unit is constituted by a plurality of first memory cells and each of the first memory cells only stores one bit of data in the single page programming mode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A memory control circuit unit for controlling a rewritable non-volatile memory module, the memory control circuit unit comprising:
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a host interface configured to coupled to a host system; a memory interface configured to couple to the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, and each of the physical erasing units comprises a plurality of physical programming units; a buffer memory coupled to the host interface and the memory interface; and a memory management circuit coupled to the host interface, the memory interface and the buffer memory, wherein the memory management circuit is configured to receive a first write command from the host system and store data corresponding to the first write command into the buffer memory, wherein the memory management circuit is further configured to issue a first command sequence to write the data corresponding to the first write command from the buffer memory to at least one first physical programming unit of a first physical erasing unit among the physical erasing units by using a single page programming mode if a write cache function is disabled and the data corresponding to the first write command is stored into the buffer memory, wherein the at least one first physical programming unit is constituted by a plurality of first memory cells and each of the first memory cells only stores one bit of data in the single page programming mode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A memory storage device, comprising:
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a connection interface unit configured to couple to a host system; a rewritable non-volatile memory module comprising a plurality of physical erasing units, and each of the physical erasing units comprising a plurality of physical programming units; and a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module, and comprising a buffer memory, wherein the memory control circuit unit is configured to receive a first write command from the host system and store data corresponding to the first write command into the buffer memory, wherein the memory control circuit unit is further configured to issue a first command sequence to write the data corresponding to the first write command from the buffer memory to at least one first physical programming unit of a first physical erasing unit among the physical erasing units by using a single page programming mode if a write cache function is disabled and the data corresponding to the first write command is stored into the buffer memory, wherein the at least one first physical programming unit is constituted by a plurality of first memory cells and each of the first memory cells only stores one bit of data in the single page programming mode. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification