CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMING AN ELECTRICAL CONTACT

• US 20170338169A1
• Filed: 05/22/2017
• Published: 11/23/2017
• Est. Priority Date: 05/20/2016
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Mahler, Joachim, Bauer, Michael, Dangelmaier, Jochen, Engl, Reimund, Gatterbauer, Johann, Hille, Frank, Huettinger, Michael, Kanert, Werner, Koerner, Heinrich, Ruehle, Brigitte, Santos Rodriguez, Francisco Javier, Vellei, Antonio
• Granted Patent: US 10,461,056 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02288 printing, e.g. ink-jet printing per se B41J
• CPC Class Codes: H01L 2224/0346 Plating
• CPC Class Codes: H01L 2224/03826 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03827 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/03831 involving a chemical process, e.g. etching the bonding area
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05657 : Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/05664 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05681 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/43848 : Thermal treatments, e.g. annealing, controlled cooling
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45565 : Single coating layer
• CPC Class Codes: H01L 2224/45572 : Two-layer stack coating
• CPC Class Codes: H01L 2224/45573 : Three-layer stack coating
• CPC Class Codes: H01L 2224/45611 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/45618 : Zinc (Zn) as principal constituent
• CPC Class Codes: H01L 2224/45639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45649 : Manganese (Mn) as principal constituent
• CPC Class Codes: H01L 2224/45655 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/45657 : Cobalt (Co) as principal constituent
• CPC Class Codes: H01L 2224/45664 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/45666 : Titanium (Ti) as principal constituent
• CPC Class Codes: H01L 2224/45669 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/4567 : Zirconium (Zr) as principal constituent
• CPC Class Codes: H01L 2224/45671 : Chromium (Cr) as principal constituent
• CPC Class Codes: H01L 2224/45672 : Vanadium (V) as principal constituent
• CPC Class Codes: H01L 2224/4568 : Molybdenum (Mo) as principal constituent
• CPC Class Codes: H01L 2224/45686 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/4569 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/45693 : with a principal constituent of the material being a solid not provided for in groups H01L2224/456 - H01L2224/45691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48106 : the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
• CPC Class Codes: H01L 2224/4813 : Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4846 : with multiple bonds on the same bonding area
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/4847 : the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
• CPC Class Codes: H01L 2224/48507 : comprising an intermetallic compound
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/85375 : having an external coating, e.g. protective bond-through coating
• CPC Class Codes: H01L 2224/85801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8592 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 23/293 : Organic, e.g. plastic
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/3135 : Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/3142 : Sealing arrangements between parts, e.g. adhesion promotors
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Claims

1. A chip package, comprising:

a chip comprising a chip metal surface;

a metal contact structure, the metal contact structure electrically contacting the chip metal surface;

a packaging material; and

a protective layer comprising or consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material;

wherein the protective layer comprises or essentially consists of at least one material of a group of inorganic materials, the group consisting of

Ni, Co, Cr, Ti, V, Mn, Zn, Sn, Mo, Zr.

2. A chip package, comprising:

a chip comprising a chip metal surface;

a metal contact structure, the metal contact structure electrically contacting the chip metal surface, wherein the metal contact structure comprises copper and/or silver;

a packaging material; and

a protective layer comprising or consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material;

wherein the protective layer comprises or essentially consists of an azole and/or tetracyanoquinodimethane that is different from the packaging material.

3. A leadframe based chip package, comprising:

a chip;

a metal contact structure comprising a non-noble metal and electrically contacting the chip;

a packaging material; and

a protective layer comprising or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material;

wherein the protective layer comprises a noble metal;

wherein the portion of the protective layer comprises a plurality of regions free from the noble metal, and

wherein the regions free from the noble metal provide an interface between the packaging material and the non-noble metal or a further non-noble metal.

4. The chip package of claim 3,

wherein each region of the plurality of regions free from the noble metal has a minimum diameter of 1 nm.

5. The chip package of claim 3,

wherein a cumulative area of the regions free from the noble metal is at least 5% of the area of the portion of the protective layer.

6. The chip package of claim 3,

wherein the non-noble metal comprises the metal of the metal contact structure.

7. A method of forming a chip package, the chip package comprising a chip, a metal contact structure and a packaging material, the method comprising:

electrically contacting the chip with the metal contact structure;

forming a protective layer at least over a portion of the metal contact structure using a printing process; and

after the electrically contacting the chip and after the forming the protective layer, packaging the chip and the metal contact structure with the packaging material, such that the protective layer is arranged at an interface between the at least a portion of the metal contact structure and the packaging material, wherein the protective layer comprises or essentially consists of at least one material of a group of inorganic materials, the group consisting of

aluminum oxide;

copper oxide;

amorphous or crystalline silicon dioxide;

tetraethyl orthosilicate;

a nitride;

a phosphate;

a carbide,

a boride,

an aluminate;

amorphous carbon or other carbon-rich material;

Al, Ta, Co, Ti, W, Co(P), CoWP, V, Mn, Zn, Mo, Au, Ru, Rh, Zr, Re, Ir, Si;

a compound comprising nitrogen and the metal of a chip metal surface

and/or of the metal contact structure; and

a compound comprising silicon and the metal of the chip metal surface and/or of the metal contact structure.

8. A method of forming a leadframe based chip package, the chip package comprising a chip, a metal contact structure and a packaging material, the method comprising:

forming a protective layer comprising a noble metal at least over a portion of the metal contact structure;

partially removing the protective layer over the metal contact structure, thereby forming a plurality of regions free from the noble metal;

electrically contacting the chip with the metal contact structure; and

after the forming and partially removing the protective layer and after the electrically contacting the chip, packaging the chip and the metal contact structure with the packaging material, thereby physically contacting the regions free from the noble metal, in which a non-noble metal is exposed, with the packaging material.

9. A method of forming a chip package, the chip package comprising a chip having a chip metal surface, a metal contact structure, and a packaging material, the method comprising:

electrically contacting the chip metal surface with the metal contact structure;

depositing silicon oxide or silicon nitride with simultaneous co-adsorption of silanes, metal oxides or calcium, thereby forming a protective layer on or in at least a portion of the metal contact structure and/or the chip metal surface; and

after the electrically contacting the chip and after the forming the protective layer, packaging the chip and the metal contact structure with the packaging material, such that the protective layer is arranged at an interface between the at least a portion of the metal contact structure and the packaging material.

10. The method of claim 9,

wherein the depositing is executed by ALD, PECVD, PLCVD or PVD.

11. A method of forming an electrical contact, comprising:

arranging a metal contact structure over or on a metal surface;

plating a metal layer on the metal surface and on the metal contact structure, thereby fixing the metal contact structure to the metal surface and forming an electrical contact between the metal contact structure and the metal surface or strengthening or thickening an existing electrical contact between the metal contact structure and the metal surface.

12. The method of claim 11, further comprising:

before the plating the metal layer on the metal surface and on the metal contact structure, treating the metal surface and the metal contact structure by a process involving wet chemistry, dry chemistry, and/or a plasma in order to prepare a surface of the metal surface and of the metal contact structure for the plating.

13. The method of claim 11, further comprising:

before the arranging a metal contact structure, arranging an intermediate layer on the metal surface.

14. The method of claim 13,

wherein the arranging the intermediate layer comprises arranging the intermediate layer as a structured intermediate layer.

15. The method of claim 11, further comprising:

after the arranging a metal contact structure, arranging a final protection layer on the metal surface and on the contact structure.

16. The method of claim 13,

wherein the intermediate layer comprises an adhesion promoter and the arranging a metal contact structure comprises arranging the metal contact structure on or in or partially in the adhesion promoter.

17. The method of claim 13,

wherein the arranging the intermediate layer comprises deposition, stencil printing or screen printing.

18. The method of claim 13,

wherein the intermediate layer is configured to prevent a plating of the metal on the intermediate layer.

19. The method of claim 11, further comprising:

after the plating of the metal layer, arranging solder over a contact portion where the electrical contact between the metal contact structure and the metal surface is formed.

20. A method of forming an electrical contact, comprising:

depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer comprises aluminum oxide, and the region of the metal surface comprises copper; and

electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure comprises copper.