SEMICONDUCTOR DEVICE WITH METAL GATES
First Claim
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1. A semiconductor device, comprising:
- a substrate, having a first region and a second region;
a plurality of fin-shaped structures, respectively disposed in the first region and the second region;
a protection layer, conformally covering the surface of the substrate and the sidewalls of the fin-shaped structures in the first region and the second region;
a plurality of epitaxial layers, respectively conformally disposed on and in direct contact with the fin-shaped structures in the first region; and
a gate electrode, covering the fin-shaped structures in the second region, wherein the protection layer is disposed between the gate electrode and the fin-shaped structures.
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Abstract
A semiconductor device includes at least a substrate, fin-shaped structures, a protection layer, epitaxial layers, and a gate electrode. The fin-shaped structures are disposed in a first region and a second region of the substrate. The protection layer conformally covers the surface of the substrate and the sidewalls of fin-shaped structures. The epitaxial layers respectively conformally and directly cover the fin-shaped structures in the first region. The gate electrode covers the fin-shaped structures in the second region, and the protection layer is disposed between the gate electrode and the fin-shaped structures.
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9 Claims
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1. A semiconductor device, comprising:
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a substrate, having a first region and a second region; a plurality of fin-shaped structures, respectively disposed in the first region and the second region; a protection layer, conformally covering the surface of the substrate and the sidewalls of the fin-shaped structures in the first region and the second region; a plurality of epitaxial layers, respectively conformally disposed on and in direct contact with the fin-shaped structures in the first region; and a gate electrode, covering the fin-shaped structures in the second region, wherein the protection layer is disposed between the gate electrode and the fin-shaped structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification