SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a first structure including a substrate and a peripheral circuit disposed on the substrate;
a dummy buffer stack structure disposed on the first structure, the dummy buffer stack structure including dummy interlayer insulating layers and dummy sacrificial insulating layers, which are alternately stacked, and first dummy conductive rings stacked in a line inside the respective dummy sacrificial insulating layers;
a peripheral contact hole penetrating the dummy buffer stack structure, the peripheral contact hole being surrounded by the first dummy conductive rings; and
a peripheral contact plug disposed in the peripheral contact hole, the peripheral contact plug extending to be connected to the peripheral circuit.
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Accused Products
Abstract
A semiconductor device includes a first structure, a dummy buffer stack structure, a peripheral contact hole, and a peripheral contact plug. The first structure may include a substrate and a peripheral circuit disposed on the substrate. The dummy buffer stack structure may be disposed on the first structure. The dummy buffer stack structure may include dummy interlayer insulating layers and dummy sacrificial insulating layers, which are alternately stacked, and first dummy conductive rings stacked in a line inside the respective dummy sacrificial insulating layers. The peripheral contact hole may penetrate the dummy buffer stack structure. The peripheral contact hole may be surrounded by the first dummy conductive rings. The peripheral contact plug may be disposed in the peripheral contact hole. The peripheral contact plug may extend to be connected to the peripheral circuit.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first structure including a substrate and a peripheral circuit disposed on the substrate; a dummy buffer stack structure disposed on the first structure, the dummy buffer stack structure including dummy interlayer insulating layers and dummy sacrificial insulating layers, which are alternately stacked, and first dummy conductive rings stacked in a line inside the respective dummy sacrificial insulating layers; a peripheral contact hole penetrating the dummy buffer stack structure, the peripheral contact hole being surrounded by the first dummy conductive rings; and a peripheral contact plug disposed in the peripheral contact hole, the peripheral contact plug extending to be connected to the peripheral circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a first structure including a substrate and a peripheral circuit disposed on the substrate; a second structure disposed on the first structure, the second structure including a source stack structure and a dummy source stack structure, which are disposed at the same height and formed into different stack structures; a third structure disposed on the second structure, the third structure including a cell stack structure and a dummy buffer stack structure, which are isolated from each other; and a peripheral contact plug penetrating the dummy buffer stack structure and the dummy source stack structure, the peripheral contact plug being electrically connected to the peripheral circuit. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification