METHODS FOR USING REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD) AND SPUTTERING DEPOSITION TO GROW LAYERS IN LIGHT EMITTING DEVICES
First Claim
1. A method for growing a light emitting device, the method comprising:
- growing a light emitting device structure on a growth substrate, the light emitting device structure including a n-type region, a light emitting region and a p-type region stacked together; and
growing a tunnel junction on the light emitting device structure by using at least one of remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition.
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Accused Products
Abstract
Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.
13 Citations
20 Claims
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1. A method for growing a light emitting device, the method comprising:
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growing a light emitting device structure on a growth substrate, the light emitting device structure including a n-type region, a light emitting region and a p-type region stacked together; and growing a tunnel junction on the light emitting device structure by using at least one of remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for growing a device, comprising:
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growing a p-type region over a growth substrate by at least one of RP-CVD and sputtering deposition; growing a light emitting region over the p-type region; and growing an n-type region over the light emitting region, wherein the p-type region, the light emitting region and the n-type region are made from III-nitride materials. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for growing a device, comprising:
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growing a p-type region over a growth substrate; growing a light emitting region over the p-type region; and growing an n-type region over the light emitting region, wherein at least one of the light emitting region and the n-type region are grown in by at least one of RP-CVD and sputtering deposition. - View Dependent Claims (19, 20)
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Specification