LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE ARRAY COMPRISING SAME

• US 20170338380A1
• Filed: 12/24/2015
• Published: 11/23/2017
• Est. Priority Date: 12/24/2014
• Status: Active Grant

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: LEE, Keon Hwa, CHOI, Byeong Kyun
• Granted Patent: US 10,186,640 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Provided in one embodiment is a light emitting diode comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on top of the first conductive semiconductor layer, and a second conductive semiconductor layer on top of the active layer; a first electrode arranged on a portion of the first conductive semiconductor layer; an insulating layer, which is arranged on a portion of the first electrode, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a DBR structure; and a second electrode arranged on the second conductive semiconductor layer, wherein the first electrode comes into contact with the insulating layer via a first surface and is exposed to the insulating layer via a second surface opposite the first surface.

Claims

1. A light emitting diode comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer;

a first electrode disposed on a portion of the first conductive semiconductor layer;

an insulating layer disposed on the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer, the insulating layer having a DBR structure; and

a second electrode disposed on the second conductive semiconductor layer,

wherein the light emitting structure includes a first mesa region, and the first conductive semiconductor layer includes a second mesa region,

wherein the first electrode is disposed on a side surface of the first conductive semiconductor layer in the second mesa region.

3. The light emitting diode according to claim 1, wherein the first electrode includes a first surface and a second surface, the first surface being in contact with the insulating layer disposed thereon and the second surface being opposite the first surface and being exposed.

4. The light emitting diode according to claim 1, wherein the first electrode extends to a periphery of the second mesa region.

5. The light emitting diode according to claim 1, wherein an open region through which the second conductive semiconductor layer is exposed is disposed on the first mesa region, and at least a portion of the second electrode is disposed on the open region.

6. The light emitting diode according to claim 5, wherein at least portions of the second conductive semiconductor layer, the insulating layer and the second electrode overlap each other in a periphery of the open region on the first mesa etching region.

7. The light emitting diode according to claim 1, wherein the DBR structure is formed such that arrangement of TiO₂ and SiO₂ or arrangement of Ta₂O₅ and SiO₂ is repeated at least twice.

8. The light emitting diode according to claim 1, wherein the first electrode includes an ohmic layer, a reflective layer, and a coupling layer disposed on the reflective layer.

9. The light emitting diode according to claim 8, wherein the coupling layer includes titanium (Ti).

10. The light emitting diode according to claim 1, wherein the second electrode includes an ohmic layer and a reflective layer.

11. The light emitting diode according to claim 10, wherein the ohmic layer of the second electrode includes chrome (Cr), silver (Ag) or titanium (Ti).

12. The light emitting diode according to claim 10, wherein the ohmic layer of the second electrode has a thickness of 1 nm or less.

13. The light emitting diode according to claim 10, wherein the reflective layer includes an alloy of platinum (Pt) and gold (Au), an alloy of nickel (Ni) and gold (Au), an alloy of aluminum (Al), platinum (Au) and gold (Au), or an alloy of aluminum (Al), nickel (Ni) and gold (Au).

2. (canceled)

14. A light emitting diode comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, a second conductive semiconductor layer disposed on the active layer, a first mesa region, and a second mesa region formed in the first conductive semiconductor layer;

a first electrode disposed on the second mesa region;

a second electrode disposed on the first mesa region; and

an insulating layer disposed between the first electrode and the second electrode, the insulating layer having a DBR structure,

wherein the first electrode includes a first surface and a second surface, the first surface being in contact with the insulating layer and the second surface being opposite the first surface and having an open portion, and

the second electrode includes a first surface and a second surface, the first surface having an open portion and the second surface being opposite the first surface and being in contact with the light emitting structure.

15. The light emitting diode according to claim 14, wherein the insulating layer is disposed on the first surface of the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer.

16. The light emitting diode according to claim 14, wherein the second surface of the first electrode is in contact with an upper surface and a side surface of the first conductive semiconductor layer in the second mesa region.

17. A light emitting diode array comprising:

a circuit board;

a plurality of light emitting diodes, each including;

a light emitting structure disposed on the circuit board and including a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer;

a first electrode disposed on a portion of the first conductive semiconductor layer;

an insulating layer disposed on the first electrode, the first conductive semiconductor layer, the active layer and a portion of the second conductive semiconductor layer, the insulating layer having a DBR structure; and

a second electrode disposed on the second conductive semiconductor layer,

an anisotropic conductive film (ACF) disposed between the circuit board and the light emitting diodes,

wherein the ACF includes a base material and conductive balls provided in the base material, and the conductive balls are in contact with the circuit board and the second electrode,

wherein the first electrode includes a first surface and a second surface, the first surface being in contact with the insulating layer and the second surface being opposite the first surface and having an open portion, and

the second electrode includes a first surface and a second surface, the first surface having an open portion and the second surface being opposite the first surface and being in contact with the light emitting structure.

18. The light emitting diode array according to claim 17, wherein the first electrode of each of the light emitting diodes is connected to first electrodes of other light emitting diodes using a single wiring structure in a region oriented opposite the circuit board.

19. The light emitting diode array according to claim 17, wherein the light emitting structure includes a first mesa region, the first conductive semiconductor layer includes a second mesa region, and the first electrode is disposed on the first conductive semiconductor layer in the second mesa region.

20. The light emitting diode array according to claim 19, wherein the first electrode is disposed on a side surface of the first conductive semiconductor layer in the second mesa region and extends to a periphery of the second mesa region.