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METHOD OF SIDEWALL IMAGE TRANSFER

  • US 20170345671A1
  • Filed: 05/26/2017
  • Published: 11/30/2017
  • Est. Priority Date: 05/29/2016
  • Status: Active Grant
First Claim
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1. A substrate processing method, the method comprising:

  • providing a substrate containing silicon (Si) raised features;

    depositing a conformal film on the Si raised features;

    performing a spacer etch process that removes horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film to form sidewall spacers on the Si raised features, the performing includinga) exposing the substrate to a plasma-excited first process gas consisting of H2 gas and optionally an inert gas, andb) exposing the substrate to a plasma-excited second process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, NF3, O2, and Ar, iv) NF3 and H2, or v) NF3, H2, and Ar; and

    removing the Si raised features while maintaining the sidewall spacers on the substrate, the removing includingc) exposing the substrate to a plasma-excited third process gas consisting of H2 gas and optionally an inert gas, andd) exposing the substrate to a plasma-excited fourth process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, iv) NF3, O2, and Ar, v) NF3 and H2, or vi) NF3, H2, and Ar.

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