METHOD OF SIDEWALL IMAGE TRANSFER
First Claim
1. A substrate processing method, the method comprising:
- providing a substrate containing silicon (Si) raised features;
depositing a conformal film on the Si raised features;
performing a spacer etch process that removes horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film to form sidewall spacers on the Si raised features, the performing includinga) exposing the substrate to a plasma-excited first process gas consisting of H2 gas and optionally an inert gas, andb) exposing the substrate to a plasma-excited second process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, NF3, O2, and Ar, iv) NF3 and H2, or v) NF3, H2, and Ar; and
removing the Si raised features while maintaining the sidewall spacers on the substrate, the removing includingc) exposing the substrate to a plasma-excited third process gas consisting of H2 gas and optionally an inert gas, andd) exposing the substrate to a plasma-excited fourth process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, iv) NF3, O2, and Ar, v) NF3 and H2, or vi) NF3, H2, and Ar.
1 Assignment
0 Petitions
Accused Products
Abstract
According to one embodiment, a substrate processing method includes providing a substrate containing Si raised features, depositing a conformal film on the Si raised features, and performing a spacer etch process that removes horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film to form sidewall spacers on the Si raised features, the performing including a) exposing the substrate to a plasma-excited first process gas consisting of H2 gas and optionally an inert gas, and b) exposing the substrate to a plasma-excited second process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, NF3, O2, and Ar, iv) NF3 and H2, or v) NF3, H2, and Ar. The method further includes removing the Si raised features while maintaining the sidewall spacers on the substrate. The removing may be performed using steps a) and b).
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Citations
20 Claims
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1. A substrate processing method, the method comprising:
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providing a substrate containing silicon (Si) raised features; depositing a conformal film on the Si raised features; performing a spacer etch process that removes horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film to form sidewall spacers on the Si raised features, the performing including a) exposing the substrate to a plasma-excited first process gas consisting of H2 gas and optionally an inert gas, and b) exposing the substrate to a plasma-excited second process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, NF3, O2, and Ar, iv) NF3 and H2, or v) NF3, H2, and Ar; and removing the Si raised features while maintaining the sidewall spacers on the substrate, the removing including c) exposing the substrate to a plasma-excited third process gas consisting of H2 gas and optionally an inert gas, and d) exposing the substrate to a plasma-excited fourth process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, iv) NF3, O2, and Ar, v) NF3 and H2, or vi) NF3, H2, and Ar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A substrate processing method, the method comprising:
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providing a substrate containing Si raised features; depositing a conformal film on the Si raised features; performing a plasma process that modifies horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film unmodified, the performing including a) exposing the substrate to a plasma-excited first process gas consisting of H2 gas and optionally an inert gas, and b) exposing the substrate to a plasma-excited second process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, NF3, O2, and Ar, iv) NF3 and H2, or v) NF3, H2, and Ar; and removing the modified horizontal portions of the conformal film and the Si raised features, the removing including c) exposing the substrate to a plasma-excited third process gas consisting of H2 gas and optionally an inert gas, and d) exposing the substrate to a plasma-excited fourth process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, iv) NF3, O2, and Ar, v) NF3 and H2, or vi) NF3, H2, and Ar. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A substrate processing method, the method comprising:
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providing a substrate containing SiN sidewall spacers on Si raised features; and removing the Si raised features while maintaining the SiN sidewall spacers on the substrate, the removing including exposing the substrate to a first plasma-excited process gas consisting of H2 gas and optionally an inert gas, and exposing the substrate to a second plasma-excited process gas containing i) NF3, O2, H2, and Ar, ii) NF3, O2, and H2, iii) NF3 and O2, iv) NF3, O2, and Ar, v) NF3 and H2, or vi) NF3, H2, and Ar.
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- 19. The method of claim 19, wherein the first process gas consists of H2 and Ar, and the second process gas consists of NF3, O2, H2, and Ar.
Specification