Structure and Method of Forming a Joint Assembly
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- providing a first semiconductor device and a second semiconductor device, the first semiconductor device comprising a first contact pad, the second semiconductor device comprising a second contact pad;
forming a substantially concave surface profile on one of the first contact pad or the second contact pad;
electroplating a solder layer on the first contact pad, the solder layer having a first surface contour profile that is substantially similar to a second surface contour profile of the first contact pad;
aligning the solder layer over the second contact pad;
landing the solder layer on the second contact pad; and
bonding the solder layer to the second contact pad.
1 Assignment
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Accused Products
Abstract
A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.
15 Citations
28 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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providing a first semiconductor device and a second semiconductor device, the first semiconductor device comprising a first contact pad, the second semiconductor device comprising a second contact pad; forming a substantially concave surface profile on one of the first contact pad or the second contact pad; electroplating a solder layer on the first contact pad, the solder layer having a first surface contour profile that is substantially similar to a second surface contour profile of the first contact pad; aligning the solder layer over the second contact pad; landing the solder layer on the second contact pad; and bonding the solder layer to the second contact pad. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a semiconductor device, the method comprising:
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providing a first semiconductor device and a second semiconductor device, the second semiconductor device comprising a contact pad, the contact pad having a first substantially planar surface; electroplating a solder layer on a portion of the first semiconductor device, the solder layer having a second substantially planar surface; aligning the first substantially planar surface over the second substantially planar surface; landing the first substantially planar surface on the second substantially planar surface; and bonding the first substantially planar surface to the second substantially planar surface. - View Dependent Claims (9, 10, 11, 12)
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13-20. -20. (canceled)
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21. A method, comprising:
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forming a first semiconductor device, wherein forming the first semiconductor device comprises disposing a first contact pad over an integrated passive device (IPD), wherein a first portion of the first contact pad is disposed in a first recess of the first semiconductor device, the first portion is coupled to the IPD, and the first contact pad has a first surface comprising first lateral extents spanning a first distance; forming a second semiconductor device, wherein forming the second semiconductor device comprises disposing a second contact pad over a redistribution layer (RDL), wherein a second portion of the second contact pad is disposed in a second recess of the second semiconductor device, the second portion is coupled to the RDL, and the second contact pad has a second surface comprising second lateral extents spanning a second distance, wherein the second distance is less than the first distance; and forming a joint structure between the first semiconductor device and the second semiconductor device, wherein forming the joint structure comprises forming a solder layer between the first contact pad and the second contact pad, the solder layer having a tapered sidewall profile extending with a continuously diminishing width from the first surface to the second surface, wherein at least one of the first surface or the second surface is substantially planar. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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Specification