STACKED FILM, ELECTRONIC DEVICE SUBSTRATE, ELECTRONIC DEVICE, AND METHOD OF FABRICATING STACKED FILM

• US 20170345992A1
• Filed: 05/19/2017
• Published: 11/30/2017
• Est. Priority Date: 05/24/2016
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: NOGUCHI, Takao
• Granted Patent: US 10,608,162 B2
• Time in Patent Office: Days
• CPC Class Codes: H01H 2057/006 Micromechanical piezoelectric relay
• CPC Class Codes: H10N 30/05 Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
• CPC Class Codes: H10N 30/1051 based on piezoelectric or electrostrictive films or coatings
• CPC Class Codes: H10N 30/10513 characterised by the underlying bases, e.g. substrates
• CPC Class Codes: H10N 30/2042 Cantilevers, i.e. having one fixed end
• CPC Class Codes: H10N 30/50 having a stacked or multilayer structure
• CPC Class Codes: H10N 30/85 Piezoelectric or electrostrictive active materials
• CPC Class Codes: H10N 30/8554 Lead zirconium titanate based
• CPC Class Codes: H10N 30/877 Conductive materials in general H01B1/00

Abstract

A stacked film includes an oxide film including a ZrO₂ film, a metal oxide film provided on the oxide film, and a predetermined metal film provided on the metal oxide film and having a single orientation, and the metal oxide film is a PtO film or a PdO film. In the case of this structure, the predetermined metal film has a single orientation, and characteristics of the piezoelectric film such as PZT formed on the predetermined metal film are improved. Therefore, excellent characteristics such as an increase in the driving force due to the piezoelectric film or a reduction in leakage current can be exhibited.

Claims

1. A stacked film, comprising:

an oxide film including a ZrO₂ film;

a metal oxide film provided on the oxide film; and

a predetermined metal film provided on the metal oxide film and having a single orientation,

wherein the metal oxide film is a PtO film or a PdO film.

2. The stacked film according to claim 1,

wherein the predetermined metal film is a metal film including a metal contained in the metal oxide film.

3. The stacked film according to claim 2,

wherein the predetermined metal film is a Pt film or a Pd film, and

each of a [100] axis of the ZrO₂ film, and a [100] axis of the Pt film or the Pd film is parallel to an interface between the metal oxide film and the Pt layer, and axes of both are parallel to each other.

4. The stacked film according to claim 1,

wherein the oxide film comprises:

a ZrO₂ film; and

an Y₂O₃ film interposed between the ZrO₂ film and the metal oxide film.

5. The stacked film according to claim 1, further comprising:

a piezoelectric film provided on the predetermined metal film.

6. An electronic device substrate,

wherein the stacked film according to claim 1 is provided on a wafer having a size equal to or greater than 6 inches.

7. An electronic device,

wherein a potential application terminal for applying a potential is electrically connected to the predetermined metal film of the stacked film according to claim 1.

8. A method of fabricating the stacked film according to claim 1, comprising steps of:

forming the oxide film including a ZrO₂ film;

supplying oxygen into a chamber and forming the metal oxide film formed of a PtO film or a PdO film on the oxide film in an oxygen atmosphere using a sputtering method with Pt or Pd as a target; and

forming the predetermined metal film containing Pt or Pd on the metal oxide film in a state in which the supply of the oxygen into the chamber is stopped.