SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS

• US 20170347398A1
• Filed: 08/17/2017
• Published: 11/30/2017
• Est. Priority Date: 09/12/2014
• Status: Active Grant

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: AOYAMA, Takayuki, KATO, Shinichi
• Granted Patent: US 10,028,336 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/046 using ion implantation
• CPC Class Codes: H01L 21/0485 Ohmic electrodes
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 21/76889 by forming silicides of refractory metals
• CPC Class Codes: H05B 3/0047 for semiconductor manufacture

Abstract

Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.

Claims

1. A method of heat treatment for forming a contact of a semiconductor substrate by emitting flash light to said semiconductor substrate, the method comprising the steps of:

(a) transporting a semiconductor substrate into a chamber, said semiconductor substrate having a metal layer being formed on an impurity region into which ions are implanted;

(b) forming, in said chamber, a forming gas atmosphere containing hydrogen;

(c) preheating said semiconductor substrate at a predetermined preheating temperature; and

(d) forming a contact at an interface between said metal layer and said impurity region by emitting flash light from a flash lamp to said semiconductor substrate for one second or less for heating.

2. The method according to claim 1, wherein

a surface of said semiconductor substrate, to which flash light is emitted in said step (d), reaches a temperature of 1000°

C. or more.

3. The method according to claim 1, wherein

in said step (d), said impurities implanted into said impurity region are activated at the same time as formation of the contact.

4. The method according to claim 3, wherein

in said step (d), recrystallization of said impurity region is promoted.

5. The method according to claim 1, wherein

spectral distribution of said flash light has intensity at a wavelength of 300 nm relative to intensity at a wavelength of 500 nm is 20% or more.

6. The method according to claim 1, wherein

said semiconductor substrate is formed of silicon carbide.