BULK CROSS-COUPLED HIGH DENSITY POWER SUPPLY DECOUPLING CAPACITOR

• US 20170352651A1
• Filed: 06/02/2016
• Published: 12/07/2017
• Est. Priority Date: 06/02/2016
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: KUMAR, Albert, DANG, Hai, DUNDIGAL, Sreeker, VADI, Vasisht
• Granted Patent: US 10,032,763 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/0266 using field effect transistors as protective elements
• CPC Class Codes: H01L 27/0288 using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0811 MIS diodes
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/94 Metal-insulator-semiconductors, e.g. MOS

Abstract

In an aspect of the disclosure, a MOS device for using bulk cross-coupled thin-oxide decoupling capacitor is provided. The MOS device may include a pMOS transistor and an nMOS transistor. The MOS device may include a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The first set of transistor body connections may couple a first voltage source to the pMOS transistor body. The first set of transistor body connections may further couple a second voltage source to the nMOS transistor body. The MOS device may include a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor. The second set of transistor body connections may couple the nMOS transistor gate to the pMOS transistor body. The second set of transistor body connections may further couple the pMOS transistor gate to the nMOS transistor body.

Claims

1. A metal oxide semiconductor (MOS) device, comprising:

a p-type MOS (pMOS) transistor having a pMOS transistor gate, a pMOS transistor source, a pMOS transistor drain, and a pMOS transistor body, the pMOS transistor source being coupled to the pMOS transistor drain and to a first voltage source;

an n-type MOS (nMOS) transistor having an nMOS transistor gate, an nMOS transistor source, an nMOS transistor drain, and an nMOS transistor body, the nMOS transistor source being coupled to the nMOS transistor drain and to a second voltage source less than the first voltage source;

a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor, the first set of transistor body connections coupling the first voltage source to the pMOS transistor body, the first set of transistor body connections further coupling the second voltage source to the nMOS transistor body; and

a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor, the second set of transistor body connections coupling the nMOS transistor gate to the pMOS transistor body, the second set of transistor body connections further coupling the pMOS transistor gate to the nMOS transistor body.

2. The MOS device of claim 1, wherein the second set of transistor body connections is unconnected to the first voltage source and the second voltage source.

3. The MOS device of claim 1, wherein the pMOS transistor and the nMOS transistor are between the first set of transistor body connections and the second set of transistor body connections.

4. The MOS device of claim 1, wherein:

the first set of transistor body connections comprises a first pMOS body connection coupling the first voltage source to the pMOS transistor body, and a first nMOS body connection coupling the second voltage source to the nMOS transistor body;

the second set of transistor body connections comprises a second pMOS body connection coupling the nMOS transistor gate to the pMOS transistor body, and a second nMOS body connection coupling the pMOS transistor gate to the nMOS transistor body;

a resistance between the first pMOS body connection and the second pMOS body connection being greater than a first resistance; and

a resistance between the first nMOS body connection and the second nMOS body connection being greater than a second resistance.

5. The MOS device of claim 4, wherein the first resistance is greater than a resistance threshold.

6. The MOS device of claim 4, wherein the second resistance is greater than a resistance threshold.

7. The MOS device of claim 4, wherein a distance between the first pMOS body connection and the second pMOS body connection is greater than a distance threshold.

8. The MOS device of claim 4, wherein a distance between the first nMOS body connection and the second nMOS body connection is greater than a distance threshold.

9. The MOS device of claim 1, further comprising:

a second pMOS transistor having a second pMOS transistor gate, a second pMOS transistor source, a second pMOS transistor drain, and a second pMOS transistor body, the second pMOS transistor source being coupled to the second pMOS transistor drain and to the first voltage source; and

a second nMOS transistor having a second nMOS transistor gate, a second nMOS transistor source, a second nMOS transistor drain, and a second nMOS transistor body, the second nMOS transistor source being coupled to the second nMOS transistor drain and to the second voltage source,

wherein the second set of transistor body connections is between the pMOS transistor and the second pMOS transistor, and is between the nMOS transistor and the second nMOS transistor.

10. The MOS device of claim 9, further comprising a third set of transistor body connections adjacent the second pMOS transistor and the second nMOS transistor, the third set of transistor body connections coupling the first voltage source to the second pMOS transistor body, the third set of transistor body connections further coupling the second voltage source to the second nMOS transistor body.

11. The MOS device of claim 10, further comprising:

a first set of pMOS transistors coupled in parallel with the pMOS transistor, each of the first set of pMOS transistors having a source coupled together and to the pMOS transistor source, a drain coupled together and to the pMOS transistor drain, a gate coupled together and to the pMOS transistor gate, and a body coupled together and to the pMOS transistor body;

a first set of nMOS transistors coupled in parallel with the nMOS transistor, each of the first set of nMOS transistors having a source coupled together and to the nMOS transistor source, a drain coupled together and to the nMOS transistor drain, a gate coupled together and to the nMOS transistor gate, and a body coupled together and to the nMOS transistor body;

a second set of pMOS transistors coupled in parallel with the second pMOS transistor, each of the second set of pMOS transistors having a source coupled together and to the second pMOS transistor source, a drain coupled together and to the second pMOS transistor drain, a gate coupled together and to the second pMOS transistor gate, and a body coupled together and to the second pMOS transistor body; and

a second set of nMOS transistors coupled in parallel with the second nMOS transistor, each of the second set of nMOS transistors having a source coupled together and to the second nMOS transistor source, a drain coupled together and to the second nMOS transistor drain, a gate coupled together and to the second nMOS transistor gate, and a body coupled together and to the second nMOS transistor body.

12. The MOS device of claim 11, wherein:

the pMOS transistor, the first set of pMOS transistors, the nMOS transistor, and the first set of nMOS transistors are between the first set of transistor body connections and the second set of transistor body connections, and

the second pMOS transistor, the second set of pMOS transistors, the second nMOS transistor, and the second set of nMOS transistors are between the second set of transistor body connections and the third set of transistor body connections.

13. A method of operating a metal oxide semiconductor (MOS) device, comprising:

providing a first voltage to a p-type MOS (pMOS) transistor source and a pMOS transistor drain of a pMOS transistor, the pMOS transistor further having a pMOS transistor gate and a pMOS transistor body, the pMOS transistor body being a part of an n-type well (n-well);

providing a second voltage to an n-type MOS (nMOS) transistor source and an nMOS transistor drain of an nMOS transistor, the nMOS transistor further having an nMOS transistor gate and an nMOS transistor body, the nMOS transistor body being a part of a p-type substrate (p-substrate), the second voltage being less than the first voltage;

providing the first voltage to the n-well;

providing the second voltage to the p-substrate;

providing a third voltage from the n-well to the nMOS transistor gate; and

providing a fourth voltage from the p-substrate to the pMOS transistor gate.

14. The method of claim 13, wherein the third voltage is less than the first voltage, and the fourth voltage is less than the second voltage.

15. The method of claim 13, wherein the first voltage is provided to the n-well at a first location on the n-well and the third voltage is provided from the n-well at a second location on the n-well.

16. The method of claim 15, wherein a resistance between the first location and the second location is greater than a resistance threshold.

17. The method of claim 15, wherein a distance between the first location and the second location is greater than a distance threshold.

18. The method of claim 13, wherein the second voltage is provided to the p-substrate at a first location on the p-substrate and the fourth voltage is provided from the p-substrate at a second location on the p-substrate.

19. The method of claim 18, wherein a resistance between the first location and the second location is greater than a resistance threshold.

20. The method of claim 18, wherein a distance between the first location and the second location is greater than a distance threshold.

21. The method of claim 13, further comprising:

providing the first voltage to a second pMOS source and a second pMOS drain of a second pMOS transistor, the second pMOS transistor further having a second pMOS transistor gate and a second pMOS transistor body, the second pMOS transistor body being a second part of the n-well; and

providing the second voltage to a second nMOS transistor source and a second nMOS transistor drain of a second nMOS transistor, the second nMOS transistor further having a second nMOS transistor gate and a second nMOS transistor body, the second nMOS transistor body being a second part of the p-substrate.

22. The method of claim 21, further comprising:

providing the third voltage from the n-well to the second nMOS transistor gate; and

providing the fourth voltage from the p-substrate to the second pMOS transistor gate.

23. The method of claim 22, the MOS device further comprising:

a first set of pMOS transistors coupled in parallel with the pMOS transistor, each of the first set of pMOS transistors having a source coupled together and to the pMOS transistor source, a drain coupled together and to the pMOS transistor drain, a gate coupled together and to the pMOS transistor gate, and a body coupled together and to the pMOS transistor body;

a first set of nMOS transistors coupled in parallel with the nMOS transistor, each of the first set of nMOS transistors having a source coupled together and to the nMOS transistor source, a drain coupled together and to the nMOS transistor drain, a gate coupled together and to the nMOS transistor gate, and a body coupled together and to the nMOS transistor body;

a second set of pMOS transistors coupled in parallel with the second pMOS transistor, each of the second set of pMOS transistors having a source coupled together and to the second pMOS transistor source, a drain coupled together and to the second pMOS transistor drain, a gate coupled together and to the second pMOS transistor gate, and a body coupled together and to the second pMOS transistor body; and

a second set of nMOS transistors coupled in parallel with the second nMOS transistor, each of the second set of nMOS transistors having a source coupled together and to the second nMOS transistor source, a drain coupled together and to the second nMOS transistor drain, a gate coupled together and to the second nMOS transistor gate, and a body coupled together and to the second nMOS transistor body.

24. An apparatus for operating a metal oxide semiconductor (MOS) device, comprising:

means for providing a first voltage to a p-type MOS (pMOS) transistor source and a pMOS transistor drain of a pMOS transistor, the pMOS transistor further having a pMOS transistor gate and a pMOS transistor body, the pMOS transistor body being a part of an n-type well (n-well);

means for providing a second voltage to an n-type MOS (nMOS) transistor source and an nMOS transistor drain of an nMOS transistor, the nMOS transistor further having an nMOS transistor gate and an nMOS transistor body, the nMOS transistor body being a part of a p-type substrate (p-substrate), the second voltage being less than the first voltage;

means for providing the first voltage to the n-well;

means for providing the second voltage to the p-substrate;

means for providing a third voltage from the n-well to the nMOS transistor gate; and

means for providing a fourth voltage from the p-substrate to the pMOS transistor gate.

25. The apparatus of claim 24, wherein the first voltage is provided to the n-well at a first location on the n-well and the third voltage is provided from the n-well at a second location on the n-well.

26. The apparatus of claim 25, wherein a resistance between the first location and the second location is greater than a resistance threshold, wherein a distance between the first location and the second location is greater than a distance threshold.

27. The apparatus of claim 24, wherein the second voltage is provided to the p-substrate at a first location on the p-substrate and the fourth voltage is provided from the p-substrate at a second location on the p-substrate.

28. The apparatus of claim 27, wherein a resistance between the first location and the second location is greater than a resistance threshold, wherein a distance between the first location and the second location is greater than a distance threshold.

29. The apparatus of claim 24, further comprising:

means for providing the first voltage to a second pMOS source and a second pMOS drain of a second pMOS transistor, the second pMOS transistor further having a second pMOS transistor gate and a second pMOS transistor body, the second pMOS transistor body being a second part of the n-well; and

means for providing the second voltage to a second nMOS transistor source and a second nMOS transistor drain of a second nMOS transistor, the second nMOS transistor further having a second nMOS transistor gate and a second nMOS transistor body, the second nMOS transistor body being a second part of the p-substrate.

30. The apparatus of claim 29, further comprising:

means for providing the third voltage from the n-well to the second nMOS transistor gate; and

means for providing the fourth voltage from the p-substrate to the second pMOS transistor gate.