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BULK CROSS-COUPLED HIGH DENSITY POWER SUPPLY DECOUPLING CAPACITOR

  • US 20170352651A1
  • Filed: 06/02/2016
  • Published: 12/07/2017
  • Est. Priority Date: 06/02/2016
  • Status: Active Grant
First Claim
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1. A metal oxide semiconductor (MOS) device, comprising:

  • a p-type MOS (pMOS) transistor having a pMOS transistor gate, a pMOS transistor source, a pMOS transistor drain, and a pMOS transistor body, the pMOS transistor source being coupled to the pMOS transistor drain and to a first voltage source;

    an n-type MOS (nMOS) transistor having an nMOS transistor gate, an nMOS transistor source, an nMOS transistor drain, and an nMOS transistor body, the nMOS transistor source being coupled to the nMOS transistor drain and to a second voltage source less than the first voltage source;

    a first set of transistor body connections adjacent the pMOS transistor and the nMOS transistor, the first set of transistor body connections coupling the first voltage source to the pMOS transistor body, the first set of transistor body connections further coupling the second voltage source to the nMOS transistor body; and

    a second set of transistor body connections adjacent the pMOS transistor and the nMOS transistor, the second set of transistor body connections coupling the nMOS transistor gate to the pMOS transistor body, the second set of transistor body connections further coupling the pMOS transistor gate to the nMOS transistor body.

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