SPUTTERING TARGET, OXIDE SEMICONDUCTOR, OXYNITRIDE SEMICONDUCTOR, AND TRANSISTOR
First Claim
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1. A sputtering target comprising:
- a first region; and
a second region,wherein the first region comprises an insulating material,wherein the second region comprises a conductive material, andwherein the first region and the second region each comprise a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm, a value in a neighborhood of 0.5 nm, or a value in a neighborhood of 3 nm.
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Abstract
A novel oxide semiconductor, a novel oxynitride semiconductor, a transistor including them, or a novel sputtering target is provided. A composite target includes a first region and a second region. The first region includes an insulating material and the second region includes a conductive material. The first region and the second region each include a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm or a value in the neighborhood thereof. A semiconductor film is formed using the composite target.
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Citations
19 Claims
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1. A sputtering target comprising:
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a first region; and a second region, wherein the first region comprises an insulating material, wherein the second region comprises a conductive material, and wherein the first region and the second region each comprise a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm, a value in a neighborhood of 0.5 nm, or a value in a neighborhood of 3 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An oxynitride semiconductor comprising:
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a first region; and a second region, wherein the first region comprises an element M, wherein the element M is one or more of Al, Si, Y, B, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu, wherein the second region comprises indium, and wherein the first region and the second region are arranged in a mosaic pattern. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification