SPUTTERING TARGET, OXIDE SEMICONDUCTOR, OXYNITRIDE SEMICONDUCTOR, AND TRANSISTOR

• US 20170352763A1
• Filed: 05/23/2017
• Published: 12/07/2017
• Est. Priority Date: 06/03/2016
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei
• Granted Patent: US 10,461,197 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 14/0676 Oxynitrides
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

A novel oxide semiconductor, a novel oxynitride semiconductor, a transistor including them, or a novel sputtering target is provided. A composite target includes a first region and a second region. The first region includes an insulating material and the second region includes a conductive material. The first region and the second region each include a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm or a value in the neighborhood thereof. A semiconductor film is formed using the composite target.

Claims

1. A sputtering target comprising:

a first region; and

a second region,

wherein the first region comprises an insulating material,

wherein the second region comprises a conductive material, and

wherein the first region and the second region each comprise a microcrystal whose diameter is greater than or equal to 0.5 nm and less than or equal to 3 nm, a value in a neighborhood of 0.5 nm, or a value in a neighborhood of 3 nm.

2. The sputtering target according to claim 1,

wherein the insulating material is one or more of AlO_x, AlN_y, AlO_xN_y, SiO_x, SiN_y, and SiO_xN_y,

wherein the conductive material is one or more of InO_x, InN_y, InO_xN_y, ZnO_x, ZnN_y, and ZnO_xN_y,

wherein x is a given number greater than 0, and

wherein y is a given number greater than 0.

3. The sputtering target according to claim 1,

wherein the insulating material is AlO_x, and

wherein x is greater than 0 and less than 1.65.

4. The sputtering target according to claim 1,

wherein the insulating material is AlO_xN_y,

wherein x is greater than 0 and less than 1.65, and

wherein y is greater than 0 and less than 1.65.

5. The sputtering target according to claim 1,

wherein the insulating material is SiO_x, and

wherein x is greater than 0 and less than 2.2.

6. The sputtering target according to claim 1,

wherein the insulating material is SiO_xN_y,

wherein x is greater than 0 and less than 2.2, and

wherein y is greater than 0 and less than 2.2.

7. The sputtering target according to claim 1,

wherein the first region and the second region each comprise a microcrystal whose diameter is greater than or equal to 1 nm and less than or equal to 2 nm, a value in a neighborhood of 1 nm, or a value in a neighborhood of 2 nm.

8. The sputtering target according to claim 2,

wherein an atomic ratio of In to Al and Zn in the sputtering target is 4:

2;

3, 5;

1;

6, a neighborhood of 4;

2;

3, or a neighborhood of 5;

1;

6.

9. The sputtering target according to claim 2,

wherein an atomic ratio of In to Si and Zn in the sputtering target is 4:

2;

3, 5;

1;

6, a neighborhood of 4;

2;

3, or a neighborhood of 5;

1;

6.

10. An oxide semiconductor or an oxynitride semiconductor formed using the sputtering target according to claim 1.

11. A transistor comprising the oxide semiconductor or the oxynitride semiconductor according to claim 10.

12. An oxynitride semiconductor comprising:

a first region; and

a second region,

wherein the first region comprises an element M,

wherein the element M is one or more of Al, Si, Y, B, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu,

wherein the second region comprises indium, and

wherein the first region and the second region are arranged in a mosaic pattern.

13. The oxynitride semiconductor according to claim 12, further comprising:

a third region,

wherein the element M is aluminum,

wherein the first region comprises aluminum oxynitride or aluminum zinc oxynitride,

wherein the second region comprises indium oxynitride or indium zinc oxynitride, and

wherein the third region comprises zinc oxynitride.

14. The oxynitride semiconductor according to claim 12, further comprising:

a third region,

wherein the element M is silicon,

wherein the first region comprises silicon oxynitride or silicon zinc oxynitride,

wherein the second region comprises indium oxynitride or indium zinc oxynitride, and

wherein the third region comprises zinc oxynitride.

15. The oxynitride semiconductor according to claim 13,

wherein a surrounding portion of the first region, the second region, or the third region is blurred and the first region, the second region, or the third region has a cloud-like composition.

16. The oxynitride semiconductor according to claim 12,

wherein a diameter of the first region is greater than or equal to 1 nm and less than or equal to 2 nm, a value in a neighborhood of 1 nm, or a value in a neighborhood of 2 nm.

17. The oxynitride semiconductor according to claim 12,

wherein an atomic ratio of indium to the element M and zinc is 4:

2;

3, 5;

1;

6, 1;

1;

1, a neighborhood of 4;

2;

3, a neighborhood of 5;

1;

6, or a neighborhood of 1;

1;

1.

18. A transistor comprising the oxynitride semiconductor according to claim 12.

19. The transistor according to claim 18,

wherein the transistor comprises a gate insulating film in contact with the oxynitride semiconductor, and

wherein the gate insulating film comprises silicon nitride.