LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20170352782A1
• Filed: 08/25/2017
• Published: 12/07/2017
• Est. Priority Date: 10/22/2013
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: LIAO, Wen-Luh, LU, Chih-Chiang, LEE, Shih-Chang, CHENG, Hung-Ta, CHUNG, Hsin-Chan, LIN, Yi-Chieh
• Granted Patent: US 10,453,995 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

Claims

1. A light-emitting device comprising:

a light-emitting stack having a light extraction surface, wherein the light extraction surface comprises a first region and a second region;

a semiconductor layer under the light-emitting stack opposite to the light extraction surface,

an electrode on the first region and contacting the light-emitting stack; and

a void formed in the semiconductor layer;

wherein, in a cross-sectional view, the second region covers the void.

2. The light-emitting device of claim 1, wherein the semiconductor layer has a first surface connecting to the light-emitting stack and a second surface opposite to the first surface.

3. The light-emitting device of claim 2, wherein the void is between the first surface and second surface.

4. The light-emitting device of claim 2, wherein the void comprises a bottom part near the first surface and an opening on the second surface, wherein a dimension of the bottom part is larger than the dimension of the opening.

5. The light-emitting device of claim 14, wherein the opening has a diameter d, the bottom part has a diameter D, and 1.2*d≦

D≦

10*d, wherein 0.1 μ

m≦

d≦

20 μ

m.

6. The light-emitting device of claim 14, further comprising a transparent conductive layer on the second surface to seal the opening.

7. The light-emitting device of claim 6, wherein the transparent conductive layer comprises indium tin oxide (ITO), aluminum zinc oxide (AZO), cadmium tin oxide, antimony tin oxide, zinc oxide (ZnO) or zinc tin oxide.

8. The light-emitting device of claim 6, further comprises a metal layer on the transparent conductive layer, wherein the metal layer comprises gold (Au), silver (Ag) or aluminum (Al).

9. The light-emitting device of claim 8, further comprising a bonding layer on the metal layer, wherein the bonding layer comprises comprise gold (Au), indium (In) or an alloy formed by thereof.

10. The light-emitting device of claim 9, further comprising a substrate on the bonding layer, wherein the substrate comprises silicon (Si) or silicon carbide (SiC).

11. The light-emitting device of claim 1, wherein the second region is rougher than the first region.

12. The light-emitting device of claim 2, wherein the semiconductor layer comprises a first semiconductor layer and a second semiconductor layer, and the second semiconductor layer is closer to the second surface than the first semiconductor layer, wherein an aluminum content in the first semiconductor layer is greater than the aluminum content in the second semiconductor layer.

13. The light-emitting device of claim 12, wherein the semiconductor layer comprises aluminum arsenide (AlAs) and/or aluminum gallium arsenide (Al_xGa_1-xAs).

14. The light-emitting device of claim 12, wherein the first semiconductor layer comprises aluminum arsenide (AlAs) and/or aluminum gallium arsenide (Al_xGa_1-xAs, wherein 0.5≦

x<

1).

15. The light-emitting device of claim 12, wherein the second semiconductor layer does not comprise aluminum (Al).

16. The light-emitting device of claim 15, wherein a portion of the second semiconductor layer is exposed from the first second semiconductor layer.

17. The light-emitting device of claim 12, further comprises a passivation layer covering the light-emitting stack and the first semiconductor layer and exposing the second semiconductor layer.

18. The light-emitting device of claim 1, wherein the semiconductor layer comprises a plurality of layers comprising semiconductor material, and each of the layers comprises semiconductor material having different aluminum contents.