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DOUBLE SPIN FILTER TUNNEL JUNCTION

  • US 20170352803A1
  • Filed: 08/25/2017
  • Published: 12/07/2017
  • Est. Priority Date: 10/06/2015
  • Status: Active Grant
First Claim
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1. A memory device comprising:

  • a first magnetic insulating tunnel barrier reference layer;

    a second magnetic insulating tunnel barrier reference layer on the first magnetic insulating tunnel barrier reference layer, the first and second magnetic insulating tunnel barrier reference layers each having magnetizations; and

    a free magnetic metal layer disposed between the first magnetic insulating tunnel barrier reference layer and the second magnetic insulating tunnel barrier reference layer.

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