METHOD AND SYSTEM FOR MEMS DEVICES WITH DUAL DAMASCENE FORMED ELECTRODES
First Claim
1. A manufacturing method, the method comprising:
- forming first and second dielectric layers on a semiconductor substrate, said semiconductor substrate comprising a conductive layer at least partially covered by the first dielectric layer;
removing a defined portion of the second dielectric layer;
forming vias through the second dielectric layer, said via extending to the conductive layer, wherein the vias provide electrical interconnections through the second dielectric layer between devices in the semiconductor substrate and the conductive layer;
forming electrodes by filling the vias, and the defined portion of the second dielectric layer, with a first metal; and
coupling a micro-electro-mechanical systems (MEMS) substrate to the semiconductor substrate.
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Accused Products
Abstract
Methods and systems for MEMS devices with dual damascene formed electrodes is disclosed and may include forming first and second dielectric layers on a semiconductor substrate that includes a conductive layer at least partially covered by the first dielectric layer; removing a portion of the second dielectric layer; forming vias through the second dielectric layer and at least a portion of the second dielectric layer, where the via extends to the conductive layer; forming electrodes by filling the vias and a volume that is the removed portion of the second dielectric layer with a first metal; and coupling a micro-electro-mechanical systems (MEMS) substrate to the semiconductor substrate. A third dielectric layer may be formed between the first and second dielectric layers. A metal pad may be formed on at least one electrode by depositing a second metal on the electrode and removing portions of the second metal, which may be aluminum.
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Citations
20 Claims
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1. A manufacturing method, the method comprising:
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forming first and second dielectric layers on a semiconductor substrate, said semiconductor substrate comprising a conductive layer at least partially covered by the first dielectric layer; removing a defined portion of the second dielectric layer; forming vias through the second dielectric layer, said via extending to the conductive layer, wherein the vias provide electrical interconnections through the second dielectric layer between devices in the semiconductor substrate and the conductive layer; forming electrodes by filling the vias, and the defined portion of the second dielectric layer, with a first metal; and coupling a micro-electro-mechanical systems (MEMS) substrate to the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A MEMS package, the package comprising:
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a complementary metal oxide semiconductor (CMOS) substrate comprising; a conductive layer; a first dielectric layer covering at least a portion of the conductive layer; a second dielectric layer above the first dielectric layer; a dual damascene electrode comprising a single metal layer on a top surface of the second dielectric layer and extending through the second dielectric layer and a portion of the first dielectric layer to the conductive layer; and a metal pad above the second dielectric layer; a MEMS substrate coupled to the CMOS substrate via the metal pad, the MEMS substrate comprising standoffs extending from a first surface of the MEMS substrate; and a MEMS cover coupled to a second surface of the MEMS substrate opposite to the first surface. - View Dependent Claims (18)
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19. A MEMS package, the package comprising:
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a complementary metal oxide semiconductor (CMOS) substrate comprising; a conductive layer; a first dielectric layer covering at least a portion of the conductive layer; a second dielectric layer above the first dielectric layer; a dual damascene electrode comprising a single metal layer on a top surface of the second dielectric layer and extending through the second dielectric layer and a portion of the first dielectric layer to the conductive layer; and a cavity in the first and second dielectric layers extending to the conductive layer; a MEMS substrate coupled to the CMOS substrate via the conductive layer; and a MEMS cover coupled to the MEMS substrate on a surface opposite to a surface of the MEMS substrate coupled to the CMOS substrate. - View Dependent Claims (20)
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Specification