SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- forming a plurality of sacrificial layers and a plurality of semiconductor layers on a substrate, the semiconductor layers and the sacrificial layers being repeatedly and alternately stacked on the substrate;
partially removing the sacrificial layers;
forming spacers in removed regions of the sacrificial layers; and
replacing remaining portions of the sacrificial layers with a gate electrode,wherein each of the sacrificial layers includes first portions disposed adjacent to the semiconductor layers and a second portion disposed between the first portions, the second portion having a different composition from the first portions.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of manufacturing semiconductor device includes forming a plurality of sacrificial layers and a plurality of semiconductor layers repeatedly and alternately stacked on a substrate, partially removing the sacrificial layers, forming spacers in removed regions of the sacrificial layers, and replacing remaining portions of the sacrificial layers with a gate electrode. Each of the sacrificial layers includes first portions disposed adjacent to the plurality of semiconductor layers and a second portions disposed between the first portions. The second portion having a different composition from the first portions.
-
Citations
20 Claims
-
1. A method of manufacturing a semiconductor device, the method comprising:
-
forming a plurality of sacrificial layers and a plurality of semiconductor layers on a substrate, the semiconductor layers and the sacrificial layers being repeatedly and alternately stacked on the substrate; partially removing the sacrificial layers; forming spacers in removed regions of the sacrificial layers; and replacing remaining portions of the sacrificial layers with a gate electrode, wherein each of the sacrificial layers includes first portions disposed adjacent to the semiconductor layers and a second portion disposed between the first portions, the second portion having a different composition from the first portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method of manufacturing a semiconductor device, the method comprising:
-
forming, on a substrate, a fin structure in which a plurality of sacrificial patterns and a plurality of semiconductor patterns are alternately stacked on each other, wherein each of the sacrificial patterns includes a first portion disposed adjacent to each of the plurality of semiconductor patterns and a second portion having a different composition from the first portion; forming a dummy gate on the fin structure; forming a first spacer on opposite sidewalls of the dummy gate; etching the sacrificial patterns and the semiconductor patterns using the dummy gate and the first spacer as an etch mask to form a plurality of sacrificial sheets and a plurality of nanosheets; etching sidewalls of the sacrificial sheets to form a spacer space; forming a second spacer in the spacer space; forming a source/drain region connected to the nanosheets; removing the dummy gate and the sacrificial sheets; and forming a gate insulating layer; and forming a gate electrode. - View Dependent Claims (11, 12, 13, 14, 15)
-
-
16. A method of manufacturing a semiconductor device, the method comprising:
-
forming a stacked structure disposed on a substrate, the stacked structure including a plurality of semiconductor layers and a plurality of sacrificial layers repeatedly and alternately stacked, wherein sidewalls of the sacrificial layers have a concave shape structure; forming spacers in spaces provided by the concave shape structures; removing the sacrificial layers to form openings; and forming a gate electrode in the openings, wherein each of the sacrificial layers includes first portions disposed adjacent to the semiconductor layers and a second portion disposed between the first portions, the second portion having a different composition from at least one of the first portions. - View Dependent Claims (17, 18, 19, 20)
-
Specification