STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
First Claim
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1. A method for forming a semiconductor device structure, comprising:
- forming a fin structure over a semiconductor substrate;
forming a gate stack over the semiconductor substrate to cover a portion of the fin structure; and
partially removing the gate stack such that the gate stack includes a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion.
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The gate stack includes a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion.
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Citations
20 Claims
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1. A method for forming a semiconductor device structure, comprising:
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forming a fin structure over a semiconductor substrate; forming a gate stack over the semiconductor substrate to cover a portion of the fin structure; and partially removing the gate stack such that the gate stack includes a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating a semiconductor device structure, the method comprising:
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providing a fin structure over a semiconductor substrate; depositing a gate electrode layer covering a portion of the fin structure; after depositing the gate electrode layer, etching a recess in the gate electrode layer, wherein the recess extends from a sidewall of the gate electrode towards an inner portion of the gate electrode and a sidewall of the fin structure; and epitaxially growing a feature on the fin structure, wherein the recess is between the epitaxially grown feature and the gate stack. - View Dependent Claims (13, 14, 15, 16)
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17. A method for forming a semiconductor device structure, comprising:
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forming a fin structure over a semiconductor substrate; forming a gate electrode over the semiconductor substrate to cover a portion of the fin structure, wherein the gate electrode includes a first portion and a second portion, the second portion nearer a sidewall of the fin structure, wherein the second portion has a width equal to or greater than the first portion; and after forming the gate stack, plasma etching a recess in the gate electrode, wherein the plasma etching reduces the width of the second portion such that it is less than the first portion. - View Dependent Claims (18, 19, 20)
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Specification