RED LIGHT EMITTING DIODE AND LIGHTING DEVICE

• US 20170358706A1
• Filed: 11/19/2015
• Published: 12/14/2017
• Est. Priority Date: 12/23/2014
• Status: Active Grant

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: KIM, Yong Jun, MOON, Sung Wook
• Granted Patent: US 10,177,274 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/In_xGa_1-xP layer (0≦x≦1) 125b.

Claims

1. A red light emitting device comprising:

a first conductive type first semiconductor layer;

an active layer on the first conductive type first semiconductor layer;

a second conductive type third semiconductor layer on the active layer;

a second conductive type fourth semiconductor layer on the second conductive type third semiconductor layer; and

a second conductive type fifth semiconductor layer on the second conductive type fourth semiconductor layer,

wherein the second conductive type fifth semiconductor layer includes a superlattice structure of GaP layer/In_xGa_1-xP layer (0≦

x≦

1).

2. The red light emitting device of claim 1, wherein the second conductive type fifth semiconductor layer is doped with a second conductive type dopant having a first concentration, and the GaP layer is doped with a second conductive type dopant having a concentration lower than the first concentration.

3. The red light emitting device of claim 2, wherein the In_xGa_1-xP layer (0≦

x≦

1) is not be doped with the second conductive type dopant.

4. The red light emitting device of claim 1, further comprising a first conductive type second semiconductor layer on layer between the first conductive type first semiconductor layer and the active layer.

5. The red light emitting device of the claim 4, wherein the first conductive type second semiconductor layer includes a superlattice structure of an AlInP series layer/AlInGaP series layer.

6. A red light emitting device comprising:

a first semiconductor layer of an n-type AlInGaP series;

an active layer on the first semiconductor layer of the n-type AlInGaP series;

a third semiconductor layer of a p-type AlInGaP series on the active layer;

a fourth semiconductor layer of a p-type GaInP series layer on the third semiconductor layer of the p-type AlInGaP series; and

a fifth semiconductor layer of a p-type GaP series on the fourth semiconductor layer of the p-type GaInP series layer,

wherein the fifth semiconductor layer of the p-type GaP series includes a superlattice structure of a GaP layer/In_xGa_1-xP layer (0≦

x≦

1).

7. The red light emitting device of claim 6, wherein the fourth semiconductor layer of the p-type GaInP series layer includes a pattern.

8. The red light emitting device of claim 6, wherein the fifth semiconductor layer of the p-type GaP series is doped with a p-type dopant having a first concentration, and the GaP layer is doped with a p-type dopant having a concentration lower than the first concentration.

9. The red light emitting device of claim 8, wherein the In_xGa_1-xP layer is not doped with the p-type dopant.

10. The red light emitting device of claim 6, further comprising a second semiconductor layer between the first semiconductor layer of the n-type AlInGaP series and the active layer.

11. The red light emitting device of claim 10, wherein the second semiconductor layer includes a superlattice structure of an AlInP series layer/AlInGaP series layer.

12. (canceled)

13. A red light emitting device comprising:

a first semiconductor layer including an n-type AlInGaP series material;

a second semiconductor layer on the first semiconductor layer, the second semiconductor layer including a superlattice structure of an AlInP series layer/AlInGaP series layer;

an active layer on the first semiconductor layer;

a third semiconductor layer on the active layer, the third semiconductor layer including a p-type AlInGaP series material;

a fourth semiconductor layer on the third semiconductor layer, the fourth semiconductor layer including a p-type GaInP series material; and

a fifth semiconductor layer on the fourth semiconductor layer, the fifth semiconductor layer including a p-type GaP series material.

14. The red light emitting device of claim 13, wherein the superlattice structure of an AlInP series layer/AlInGaP series layer has a range of 10 pair to 14 pair.

15. The red light emitting device of claim 13, wherein the fourth semiconductor layer has an upper surface including a pattern.

16. The red light emitting device of claim 15, wherein the fifth semiconductor layer has a lower surface contacting the pattern.