LIGHT EMITTING DIODE, LIGHT EMITTING DIODE PACKAGE INCLUDING SAME, AND LIGHTING SYSTEM INCLUDING SAME

• US 20170358708A1
• Filed: 01/12/2016
• Published: 12/14/2017
• Est. Priority Date: 01/12/2015
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: HAN, Jae Cheon
• Granted Patent: US 10,199,540 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A light emitting diode according to one embodiment comprises: a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are on the substrate; a first pad electrode part on the first conductive semiconductor layer; a current blocking layer on the second conductive semiconductor layer; a second electrode on the first conductive semiconductor layer and the current blocking layer; and a second pad electrode part on the second electrode, wherein the width of the current blocking layer can become thicker as the current blocking layer becomes closer to the first pad electrode part from the second pad electrode part.

Claims

1-14. -14. (canceled)

15. A light emitting diode comprising:

a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;

a first pad electrode part on the first conductive semiconductor layer;

a first electrode connected to the first pad electrode part;

a current blocking layer on the second conductive semiconductor layer;

a second electrode on the second conductive semiconductor layer and the current blocking layer; and

a pad electrode part on the second conductive semiconductor layer,

wherein the second electrode includes a first part closer to the first pad electrode part than to the second pad electrode part and a second part closer to the second pad electrode part than to the first pad electrode part,

wherein the first part of the second electrode is connected to the second pad electrode part,

wherein the second part of the second electrode extends from the first part,

wherein the current blocking layer includes a first region overlapped with the first part of the second electrode in a vertical direction and a second region overlapped with the second part of the second electrode,

wherein a width of the second region of the current blocking layer is wider than a width of the first region, and

wherein the width of the second region of the current blocking layer is wider than a width of the second part of the second electrode.

16. The light emitting diode of claim 15, wherein the width of the second region of the current blocking layer gradually increases toward the first pad electrode part.

17. The light emitting diode of claim 15, wherein a portion of the first region of the current blocking layer is adjacent to the second electrode part and has a width smaller than a width of the second electrode.

18. The light emitting diode of claim 15, wherein a region of the current blocking layer which is most adjacent to the first pad electrode part has a maximum horizontal width.

19. The light emitting diode of claim 15, wherein a region of the current blocking layer which is most adjacent to the second pad electrode part has a minimum horizontal width.

20. The light emitting diode of claim 15, wherein the second region of the current blocking layer has a symmetrical structure with respect to the second electrode which is overlapped with the second region in the vertical direction.

21. The light emitting diode of claim 15, wherein the first electrode is connected to the first pad electrode part, and a width of the first electrode is constant, and

wherein a width of the second electrode is constant.

22. The light emitting diode of claim 15, wherein the first part of the second electrode has a width the same as the second part.

23. The light emitting diode of claim 15, further comprising a conductive layer disposed between the current blocking layer and the second pad electrode part,

wherein the conductive layer is disposed on the second conductive semiconductor layer,

wherein the current blocking layer is disposed between the light emitting structure and the conductive layer, and

wherein the current blocking layer includes a third region overlapped with the conductive layer and the second electrode pad part in the vertical direction.

24. The light emitting diode of claim 15, wherein the second region of the current blocking layer includes a plurality of blocking portions having different widths toward the first pad electrode part from the second pad electrode part, and

wherein each of the plurality of blocking portions has a constant width.

25. The light emitting diode of claim 15, wherein the second region of the current blocking layer includes a plurality of blocking portions having different widths toward the first pad electrode part from the second pad electrode part,

wherein the plurality of blocking portions includes a first blocking portion adjacent to the first region and a second blocking portion adjacent to the first pad electrode part,

wherein the second electrode overlaps the first and second blocking portions in the vertical direction, and

wherein a width of the second blocking portion is wider than a width of the first blocking portion.

26. The light emitting diode of claim 15, wherein the current blocking layer includes a plurality of blocking portions having different widths toward the first pad electrode part from the second pad electrode part,

wherein the plurality of blocking portions includes a first blocking portion adjacent to the first region and a second blocking portion adjacent to the first pad electrode part,

wherein the second electrode overlaps the first and second blocking portions in the vertical direction,

wherein the first blocking portion has a first angle inclined with respect to the second electrode which is vertically overlapped with the first blocking portion, and

wherein the first blocking portion has a first angle inclined with respect to the second electrode which is vertically overlapped with the second blocking portion.

27. The light emitting diode of claim 15, wherein an area of the top surface of the current blocking layer is greater than an area of a bottom surface of the second electrode.

28. A light emitting diode comprising:

a substrate;

a light emitting structure including a first conductive semiconductor layer on the substrate, a second conductive semiconductor layer on the first conductive semiconductor layer and an active layer between the first and second semiconductor layers;

a first pad electrode part on the first conductive semiconductor layer;

a first electrode connected to the first pad electrode part;

a conductive layer on the second conductive semiconductor layer;

a pad electrode part on a portion of the second conductive semiconductor layer;

a current blocking layer disposed between the light emitting structure and the conducive layer; and

a second electrode extending to a region adjacent to the first pad electrode part from the second pad electrode part,

wherein the second electrode includes a first part closer to the first pad electrode part than to the second pad electrode part and a second part closer to the second pad electrode part than to the first pad electrode part,

wherein the first part of the second electrode is connected to the second pad electrode part,

wherein the second part of the second electrode extends from the first part,

wherein the current blocking layer includes a first region overlapped with the first part of the second electrode in a vertical direction and a second region overlapped with the second part of the second electrode,

wherein a width of the first region of the current blocking layer is smaller than a width of the first part,

wherein a width of the second region of the current blocking layer is wider than a width of the first region, and

wherein the width of the second region of the current blocking layer is wider than a width of the second part of the second electrode.

29. The light emitting diode of claim 28, wherein the second electrode includes a plurality of branch patterns extending to a different direction from each other from the second pad electrode part, and

wherein the current blocking layer includes a plurality of blocking patterns extending along the plurality of branch patterns from the second pad electrode part.

30. The light emitting diode of claim 28, wherein the current blocking layer includes a third region overlapped with the conductive layer and the second electrode pad part in the vertical direction, and

wherein a width of the third region is wider than a width of the second region.

31. The light emitting diode of claim 29, wherein the first electrode includes a plurality of branch patterns extending to a different direction from each other from the first pad electrode part, and

wherein one of the plurality of branch pattern of the second electrode is disposed parallel to the branch patterns of the first electrode.

32. The light emitting diode of claim 29, wherein a portion of the branch patterns of the second electrode includes a curved pattern extending toward a direction of the first pad electrode part, and

wherein an end portion of the second region of the current blocking layer has a curved shape and is disposed around an outer region of the curved pattern.

33. The light emitting diode of claim 28, wherein the second electrode includes a curved pattern at an end portion of the second part,

wherein an end portion of the second region of the current blocking layer has a curved shape, and

wherein the width of the second region of the current blocking layer gradually increases toward the first pad electrode part.