RESISTIVE MEMORY DEVICE
First Claim
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1. A device comprising:
- a substrate prepared with a lower cell dielectric layer with first type conductors disposed in a first direction, wherein the first type conductors are elongated first type conductors formed in the lower cell dielectric layer and separated by the lower cell dielectric layer;
a body unit conductor disposed on the lower cell dielectric layer and first type conductors, wherein the body unit conductor is disposed in and extends along a second direction orthogonal to the first direction and traverses the first type conductors;
second type conductors disposed on the body unit and lower cell dielectric layer, wherein the second type conductors are elongated second type conductors disposed in and along the same first direction over the first type conductors; and
an upper cell dielectric layer on the substrate over the lower cell dielectric layer, body unit conductor and second type conductors, wherein the upper cell dielectric layer isolates the second type conductors from each other.
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Abstract
A non-volatile memory device and a manufacturing method thereof are provided. The memory device includes a substrate, a lower cell dielectric layer with gate conductors and a body unit conductor disposed on the lower cell dielectric layer and gates. Memory element conductors are disposed on the body unit and lower cell dielectric layer. An upper cell dielectric layer may be on the substrate and over the lower cell dielectric layer, body unit conductor and memory element conductors. The upper cell dielectric layer isolates the memory element conductors.
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Citations
20 Claims
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1. A device comprising:
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a substrate prepared with a lower cell dielectric layer with first type conductors disposed in a first direction, wherein the first type conductors are elongated first type conductors formed in the lower cell dielectric layer and separated by the lower cell dielectric layer; a body unit conductor disposed on the lower cell dielectric layer and first type conductors, wherein the body unit conductor is disposed in and extends along a second direction orthogonal to the first direction and traverses the first type conductors; second type conductors disposed on the body unit and lower cell dielectric layer, wherein the second type conductors are elongated second type conductors disposed in and along the same first direction over the first type conductors; and an upper cell dielectric layer on the substrate over the lower cell dielectric layer, body unit conductor and second type conductors, wherein the upper cell dielectric layer isolates the second type conductors from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A device comprising:
- a substrate prepared with a lower cell dielectric layer with first type conductors disposed in a first direction, wherein the first type conductors are separated by the lower cell dielectric layer;
a body unit conductor disposed on the lower cell dielectric layer and first type conductors, wherein the body unit conductor is disposed in and extends along a second direction orthogonal to the first direction and traverses the first type conductors; second type conductors disposed on the body unit and lower cell dielectric layer, wherein the second type conductors are disposed in and extend along a direction which is parallel to the first direction over the first type conductors; and an upper cell dielectric layer on the substrate over the lower cell dielectric layer, body unit conductor and second type conductors, wherein the upper cell dielectric layer isolates the second type conductors from each other. - View Dependent Claims (17, 18, 19, 20)
- a substrate prepared with a lower cell dielectric layer with first type conductors disposed in a first direction, wherein the first type conductors are separated by the lower cell dielectric layer;
Specification