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RESISTIVE MEMORY DEVICE

  • US 20170358744A1
  • Filed: 08/07/2017
  • Published: 12/14/2017
  • Est. Priority Date: 07/25/2014
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate prepared with a lower cell dielectric layer with first type conductors disposed in a first direction, wherein the first type conductors are elongated first type conductors formed in the lower cell dielectric layer and separated by the lower cell dielectric layer;

    a body unit conductor disposed on the lower cell dielectric layer and first type conductors, wherein the body unit conductor is disposed in and extends along a second direction orthogonal to the first direction and traverses the first type conductors;

    second type conductors disposed on the body unit and lower cell dielectric layer, wherein the second type conductors are elongated second type conductors disposed in and along the same first direction over the first type conductors; and

    an upper cell dielectric layer on the substrate over the lower cell dielectric layer, body unit conductor and second type conductors, wherein the upper cell dielectric layer isolates the second type conductors from each other.

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