BIASING OF AN IONIC CURRENT SENSOR

• US 20170363573A1
• Filed: 06/17/2016
• Published: 12/21/2017
• Est. Priority Date: 06/17/2016
• Status: Active Grant

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: APARIN, Vladimir, SUN, Bo, PARK, Joung Won
• Granted Patent: US 10,024,818 B2
• Time in Patent Office: Days
• CPC Class Codes: G01N 27/27 Association of two or more measuring systems or cells, each measuring a different parameter, where the measurement results may be either used independently, the systems or cells being physically associated, or combined to produce a value for a further parameter
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/417 using cells , i.e. more than one cell and probes with solid electrolytes
• CPC Class Codes: G01N 33/48721 Investigating individual macromolecules, e.g. by translocation through nanopores Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68

Abstract

An ionic current sensor array includes a master bias generator and a plurality of sensing cells. The master bias generator is configured to generate a bias voltage. Each sensing cell includes an ionic current sensor, an integrating capacitor, a sense transistor coupled between the integrating capacitor and the ionic current sensor, and an amplifier coupled to provide a reference voltage to bias the ionic current sensor. The amplifier includes a first transistor and a second transistor. The first transistor is coupled to receive the bias voltage, and the second transistor is coupled to the first transistor to provide the reference voltage to the ionic current sensor. The second transistor is also coupled between a source of the sense transistor and the gate of the sense transistor.

Claims

1. An ionic current sensor array, comprising:

a master bias generator configured to generate a bias voltage; and

a plurality of sensing cells, wherein each sensing cell of the plurality of sensing cells includes;

an ionic current sensor;

an integrating capacitor;

a sense transistor coupled between the integrating capacitor and the ionic current sensor; and

an amplifier coupled to provide a reference voltage to bias the ionic current sensor, wherein the amplifier comprises;

a first transistor coupled to receive the bias voltage; and

a second transistor coupled to the first transistor to provide the reference voltage to the ionic current sensor and coupled between a source of the sense transistor and the gate of the sense transistor.

2. The ionic current sensor array of claim 1, wherein the second transistor is coupled to provide a feedback path between the source of the sense transistor and the gate of the sense transistor.

3. The ionic current sensor array of claim 2, wherein each sensing cell of the plurality of sensing cells comprises:

a bias voltage node coupled to the master bias generator to receive the bias voltage; and

a supply voltage node coupled to receive a supply voltage, wherein the first transistor is coupled to the bias voltage node and the supply voltage node and is configured as a current source to provide a current path between the supply voltage node and the gate of the sense transistor.

4. The ionic current sensor array of claim 3, wherein the first transistor comprises:

a gate coupled to the bias voltage node;

a source coupled to the supply voltage node; and

a drain coupled to the gate of the sense transistor, and wherein the second transistor comprises;

a gate coupled to the source of the sense transistor;

a source coupled to a common reference of a respective sensing cell; and

a drain coupled to the gate of the sense transistor.

5. The ionic current sensor array of claim 2, wherein both the first transistor and the second transistor are included in the feedback path between the source of the sense transistor and the gate of the sense transistor.

6. The ionic current sensor array of claim 5, wherein each sensing cell of the plurality of sensing cells comprises a bias voltage node coupled to the master bias generator to receive the bias voltage, wherein the first transistor comprises:

a gate coupled to the source of the sense transistor;

a source coupled to the bias voltage node; and

a drain coupled to the gate of the sense transistor, and wherein the second transistor comprises;

a gate coupled to the source of the sense transistor;

a source coupled to a common reference of a respective sensing cell; and

a drain coupled to the gate of the sense transistor.

7. The ionic current sensor array of claim 1, wherein the master bias generator comprises:

a master bias amplifier coupled to receive a master reference voltage and to generate the bias voltage in response thereto, wherein reference voltage provided by the amplifier of each of the plurality of sensing cells is substantially equal to the master reference voltage.

8. The ionic current sensor array of claim 7, wherein the master bias generator further comprises a third transistor, a fourth transistor, and a fifth transistor coupled to provide a feedback path between an output of the master bias amplifier and an input of the master bias amplifier, wherein the third transistor, the fourth transistor, and the fifth transistor are coupled together in a same arrangement as that of the sense transistor, the first transistor, and the second transistor, respectively, included in each of the plurality of sensing cells.

9. The ionic current sensor array of claim 8, wherein:

a size of the third transistor is scaled to a size of at least one of the sense transistors included in a respective sensing cell,

a size of the fourth transistor is scaled to a size of at least one of the first transistors included in the respective sensing cell, and

a size of the fifth transistor is scaled to a size of at least one of the second transistors included in the respective sensing cell.

10. The ionic current sensor array of claim 1, wherein the amplifier is coupled to selectively switch between providing a positive reference voltage and a negative reference voltage to bias the ionic current sensor.

11. The ionic current sensor array of claim 10, wherein the integrating capacitor is a first integrating capacitor of a respective sensing cell, and wherein the sense transistor is a first sense transistor of the respective sensing cell, wherein each sensing cell of the plurality of sensing cells further comprises:

a second integrating capacitor;

a second sense transistor coupled between the second integrating capacitor and the ionic current sensor;

a first switch configured to selectively couple the amplifier to the gate of the first sense transistor; and

a second switch configured to selectively couple the amplifier to a gate of the second sense transistor.

12. The ionic current sensor array of claim 11, wherein:

the first sense transistor comprises an n-channel field effect transistor (FET), and

the second sense transistor comprises a p-channel FET.

13. The ionic current sensor array of claim 1, wherein the amplifier consists of the first transistor and the second transistor.

14. A sensing cell, comprising:

an ionic current sensor;

an integrating capacitor;

a sense transistor coupled between the integrating capacitor and the ionic current sensor; and

an amplifier coupled to provide a reference voltage to bias the ionic current sensor, wherein the amplifier comprises;

a first transistor coupled to receive a bias voltage; and

a second transistor coupled to the first transistor to provide the reference voltage to the ionic current sensor and coupled between a source of the sense transistor and the gate of the sense transistor.

15. The sensing cell of claim 14, wherein the second transistor is coupled to provide a feedback path between the source of the sense transistor and the gate of the sense transistor.

16. The sensing cell of claim 15, wherein the sensing cell further comprises:

a bias voltage node coupled to a master bias generator to receive the bias voltage; and

a supply voltage node coupled to receive a supply voltage, wherein the first transistor is coupled to the bias voltage node and the supply voltage and is configured as a current source to provide a current path between the supply voltage node and the gate of the sense transistor.

17. The sensing cell of claim 15, wherein both the first transistor and the second transistor are included in the feedback path between the source of the sense transistor and the gate of the sense transistor.

18. The sensing cell of claim 14, wherein the amplifier is coupled to selectively switch between providing a positive reference voltage and a negative reference voltage to bias the ionic current sensor.

19. The sensing cell of claim 18, wherein the integrating capacitor is a first integrating capacitor, and wherein the sense transistor is a first sense transistor, wherein the sensing cell further comprises:

a second integrating capacitor;

a second sense transistor coupled between the second integrating capacitor and the ionic current sensor;

a first switch configured to selectively couple the amplifier to the gate of the first sense transistor; and

a second switch configured to selectively couple the amplifier to a gate of the second sense transistor.

20. A complementary metal-oxide-semiconductor (CMOS) ionic current sensor array, comprising:

a master bias generator configured to generate a bias voltage in response to a master reference voltage; and

a plurality of sensing cells, wherein each sensing cell of the plurality of sensing cells includes;

a bias voltage node coupled to the master bias generator;

an ionic current sensor;

an integrating capacitor;

a sense field effect transistor (FET) having a drain coupled to integrating capacitor and a source coupled to the ionic current sensor; and

an amplifier coupled to provide a reference voltage to bias the ionic current sensor, wherein the amplifier comprises;

a first FET coupled to the bias voltage node to receive the bias voltage; and

a second FET coupled to the first FET to provide the reference voltage to the ionic current sensor, wherein the second FET comprises a drain coupled to a gate of the sense FET, a source coupled to a common reference, and a gate coupled to the source of the sense FET, wherein the reference voltage is substantially equal to the master reference voltage.