ACTIVE MATRIX SUBSTRATE, METHOD OF MANUFACTURING ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE
First Claim
1. An active matrix substrate, comprising:
- a substrate;
a thin film transistor that is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes, the oxide semiconductor layer including a first region as a channel region, the gate electrode being disposed in confronted relation with the first region of the oxide semiconductor layer with a first insulating film in between, and the source and drain electrodes being electrically coupled to the oxide semiconductor layer;
an electrode layer that is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end; and
a second insulating film that is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer,the oxide semiconductor layer further including a second region having lower resistance than the first region, andthe electrode layer being electrically coupled, at the first end, to the second region of the oxide semiconductor layer.
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Accused Products
Abstract
Provided is an active matrix substrate that includes a substrate, a thin film transistor, an electrode layer, and a second insulating film. The thin film transistor is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes. The oxide semiconductor layer includes a first region as a channel region. The electrode layer is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end. The second insulating film is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer. The oxide semiconductor layer further includes a second region having lower resistance than the first region. The electrode layer is electrically coupled, at the first end, to the second region of the oxide semiconductor layer.
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Citations
12 Claims
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1. An active matrix substrate, comprising:
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a substrate; a thin film transistor that is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes, the oxide semiconductor layer including a first region as a channel region, the gate electrode being disposed in confronted relation with the first region of the oxide semiconductor layer with a first insulating film in between, and the source and drain electrodes being electrically coupled to the oxide semiconductor layer; an electrode layer that is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end; and a second insulating film that is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer, the oxide semiconductor layer further including a second region having lower resistance than the first region, and the electrode layer being electrically coupled, at the first end, to the second region of the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing an active matrix substrate, the method comprising:
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forming a thin film transistor on a substrate, the thin film transistor including an oxide semiconductor layer, a gate electrode, and source and drain electrodes, the oxide semiconductor layer including a first region as a channel region, the gate electrode being disposed in confronted relation with the first region of the oxide semiconductor layer with a first insulating film in between, and the source and drain electrodes being electrically coupled to the oxide semiconductor layer; forming, in a different region from the thin film transistor, an electrode layer that is level with the gate electrode and includes a first end; and forming a second insulating film between the substrate and the electrode layer, the second insulating film including a second end at a more retreated position than the first end of the electrode layer, the oxide semiconductor layer further including a second region having lower resistance than the first region, and the electrode layer being electrically coupled, at the first end, to the second region of the oxide semiconductor layer. - View Dependent Claims (9, 10, 11)
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12. A display device provided with an active matrix substrate, the active matrix substrate comprising:
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a substrate; a thin film transistor that is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes, the oxide semiconductor layer including a first region as a channel region, the gate electrode being disposed in confronted relation with the first region of the oxide semiconductor layer with a first insulating film in between, and the source and drain electrodes being electrically coupled to the oxide semiconductor layer; an electrode layer that is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end; and a second insulating film that is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer, the oxide semiconductor layer further including a second region having lower resistance than the first region, and the electrode layer being electrically coupled, at the first end, to the second region of the oxide semiconductor layer.
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Specification