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ACTIVE MATRIX SUBSTRATE, METHOD OF MANUFACTURING ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE

  • US 20170363926A1
  • Filed: 06/07/2017
  • Published: 12/21/2017
  • Est. Priority Date: 06/15/2016
  • Status: Active Grant
First Claim
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1. An active matrix substrate, comprising:

  • a substrate;

    a thin film transistor that is provided on the substrate and includes an oxide semiconductor layer, a gate electrode, and source and drain electrodes, the oxide semiconductor layer including a first region as a channel region, the gate electrode being disposed in confronted relation with the first region of the oxide semiconductor layer with a first insulating film in between, and the source and drain electrodes being electrically coupled to the oxide semiconductor layer;

    an electrode layer that is level with the gate electrode, is provided in a different region from the thin film transistor, and includes a first end; and

    a second insulating film that is provided between the substrate and the electrode layer and includes a second end at a more retreated position than the first end of the electrode layer,the oxide semiconductor layer further including a second region having lower resistance than the first region, andthe electrode layer being electrically coupled, at the first end, to the second region of the oxide semiconductor layer.

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