SCANNER BASED OPTICAL PROXIMITY CORRECTION SYSTEM AND METHOD OF USE

• US 20170363951A1
• Filed: 08/30/2017
• Published: 12/21/2017
• Est. Priority Date: 01/18/2007
• Status: Active Grant

• Current Assignee: Nikon Corporation, Nikon Precision Incorporated (Nikon Corporation)
• Original Assignee: Nikon Corporation, Nikon Precision Incorporated (Nikon Corporation)
• Inventors: TYMINSKI, Jacek, POPESCU, Raluca, MATSUYAMA, Tomoyuki
• Granted Patent: US 10,234,756 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G06F 30/00 Computer-aided design [CAD]
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether δ₁<ε₁, wherein δ₁ represents model vs. exposure difference and ε₁ represents predetermined criteria. The technique further includes completing the model when δ₁<ε₁.

Claims

1. A reticle design method, comprising:

preparing an OPC (Optical Proximity Correction) model which simulates a pattern image;

inputting at least one tool parameter of an exposure apparatus into the OPC model;

inputting reticle design data, which represents a design of a layout to be imaged, into the OPC model which inputted the tool parameter;

predicting a result by using the OPC model after inputting the reticle design data into the OPC model;

exposing a pattern including the layout;

comparing an exposure result and the predicted result; and

determining whether the prediction made on the basis of the OPC model vs. the exposure result is less than a predetermined criteria (ε

₂).

2. The method of claim 1, wherein if a model vs exposure difference δ

₂ is less than ε

2, then the reticle design is completed, and if δ

₂ is greater than δ

₂, then the reticle is redesigned and the pattern is corrected.

3. The method of claim 1, wherein the reticle design data including a series of numerals represents the design of the layout to be imaged.

4. The method of claim 1, wherein the tool parameters include at least one of:

illuminator details, lens signature as defined in terms of a Jones Matrix Map, local and global flare data, longitudinal chromatic aberrations, an illuminator spectrum, and transverse and longitudinal synchronization data.

5. The method of claim 4, wherein the tool parameters further include at least one of NA error, sigma error, and thermal aberration.

6. A reticle manufacturing method comprising designing a reticle by using the method of claim 1.

7. An exposure method comprising:

preparing a reticle by using the method of claim 6; and

exposing a pattern by using the reticle.

8. A device manufacturing method comprising exposing a pattern by using the method of claim 7.