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ASPECT RATIO TRAPPING IN CHANNEL LAST PROCESS

  • US 20170365692A1
  • Filed: 06/15/2016
  • Published: 12/21/2017
  • Est. Priority Date: 06/15/2016
  • Status: Active Grant
First Claim
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1. A method of forming the fin structure comprising:

  • forming a replacement gate structure is formed on a channel region of the at least one replacement fin structure;

    forming an encapsulating dielectric on the substrate and the at least one replacement gate structure, wherein the encapsulating dielectric encapsulates the replacement fin structure and a portion of the replacement gate structure is exposed;

    etching an exposed portion of the replacement gate structure to provide an opening through the encapsulating dielectric to the replacement fin structure;

    etching the replacement fin structure selectively to the encapsulating dielectric to provide a fin opening having a geometry dictated by the encapsulating dielectric that exposes a growth surface of the substrate; and

    epitaxially growing functional fin structures of a second semiconductor material on the growth surface of the substrate substantially filling the fin opening.

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