MOCVD System for Growth of III-Nitride and Other Semiconductors
First Claim
1. An MOCVD system for growing a semiconductor layer on a substrate, the MOCVD system comprising:
- an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface;
a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber;
an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer;
a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and
a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500°
C.
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Accused Products
Abstract
An MOCVD system for growing a semiconductor layer on a substrate is provided. The MOCVD system includes an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface; a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber; an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer; a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500° C.
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Citations
20 Claims
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1. An MOCVD system for growing a semiconductor layer on a substrate, the MOCVD system comprising:
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an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface; a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber; an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer; a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification