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MOCVD System for Growth of III-Nitride and Other Semiconductors

  • US 20170369995A1
  • Filed: 06/21/2017
  • Published: 12/28/2017
  • Est. Priority Date: 06/22/2016
  • Status: Active Grant
First Claim
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1. An MOCVD system for growing a semiconductor layer on a substrate, the MOCVD system comprising:

  • an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface;

    a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber;

    an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer;

    a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and

    a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500°

    C.

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