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Reduced Substrate Effects in Monolithically Integrated RF Circuits

  • US 20170372945A1
  • Filed: 06/27/2016
  • Published: 12/28/2017
  • Est. Priority Date: 06/27/2016
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure, said method comprising:

  • forming a semiconductor wafer having a device layer situated over a handle substrate, said device layer having at least one semiconductor device;

    forming a front side glass on a front side of said semiconductor wafer;

    partially removing said handle substrate from a back side of said semiconductor wafer;

    removing an outer perimeter of said semiconductor wafer.

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