SEMICONDUCTOR DEVICE, POWER DIODE, AND RECTIFIER
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Abstract
An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.
13 Citations
21 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; a first layer comprising indium and zinc over and in contact with the oxide semiconductor layer; and a second layer over and in contact with the first layer, wherein an end portion of the first layer protrudes from an end portion of the second layer in a channel length direction, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, and wherein at least a part of the oxide semiconductor layer has c-axis alignment. - View Dependent Claims (3, 4, 5, 6)
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7. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; a first layer comprising indium and zinc over and in contact with the oxide semiconductor layer; and a second layer over and in contact with the first layer, wherein a first end portion of the first layer protrudes from a first end portion of the second layer in a channel length direction, wherein a second end portion of the first layer protrudes from a second end portion of the second layer in a channel length direction, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, and wherein at least a part of the oxide semiconductor layer has c-axis alignment. - View Dependent Claims (8, 9, 10, 11)
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12. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; a first layer comprising indium and zinc over and in contact with the oxide semiconductor layer; and a second layer over and in contact with the first layer, wherein an end portion of the first layer protrudes from an end portion of the second layer in a channel length direction, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, and wherein the oxide semiconductor layer comprises an oxide including a crystal with c-axis alignment. - View Dependent Claims (13, 14, 15, 16)
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17. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate insulating layer; a first layer comprising indium and zinc over and in contact with the oxide semiconductor layer; and a second layer over and in contact with the first layer, wherein an end portion of the first layer protrudes from an end portion of the second layer in a channel length direction, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, wherein at least a part of the oxide semiconductor layer has c-axis alignment, and wherein a taper angle of the end portion of the first layer is less than or equal to 30°
. - View Dependent Claims (18, 19, 20, 21)
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Specification