RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND COMPOUND FOR RESIST UNDERLAYER FILM COMPOSITION

• US 20180011405A1
• Filed: 06/13/2017
• Published: 01/11/2018
• Est. Priority Date: 07/07/2016
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: WATANABE, Takeru, KIKUCHI, Rie, KORI, Daisuke, BIYAJIMA, Yusuke, OGIHARA, Tsutomu
• Granted Patent: US 10,620,537 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 7/025 Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds G03F7/075 takes precedence
• CPC Class Codes: G03F 7/027 Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds G03F7/075 takes precedence
• CPC Class Codes: G03F 7/038 Macromolecular compounds which are rendered insoluble or differentially wettable G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021
• CPC Class Codes: G03F 7/0392 the macromolecular compound being present in a chemically amplified positive photoresist composition
• CPC Class Codes: G03F 7/0397 the macromolecular compound having an alicyclic moiety in a side chain
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: G03F 7/202 Masking pattern being obtained by thermal means, e.g. laser ablation
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX)_n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

The dotted line represents a bonding arm. R⁰¹ represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

Claims

1. A resist underlayer film composition for use in a multilayer resist method, comprising:

(A) one or more than one compound shown by the following general formula (1); and

(B) an organic solvent,

W

X)_n  

 

(1)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms;

X represents a monovalent organic group shown by the following general formula (1X); and

“

n”

represents an integer of 1 to 10,

2. The resist underlayer film composition according to claim 1, wherein Z in the general formula (1X) is a group shown by the following general formula (1Z),

3. The resist underlayer film composition according to claim 1, wherein in the general formula (1X), Z is a group shown by the following general formula (2Z), and Y is a carbonyl group,

4. The resist underlayer film composition according to claim 1, wherein in the component (A), “

n”

in the general formula (1) is an integer of 2 to 10, and the component (A) has an aromatic part in an amount of 20 mass % or more.

5. The resist underlayer film composition according to claim 1, wherein the compound shown by the general formula (1) is contained in an amount of 20 mass % or more with respect to a total amount of a solid contained in the resist underlayer film composition.

6. The resist underlayer film composition according to claim 1, wherein the compound shown by the general formula (1) comprises a compound shown by any one of the following general formulae (2-1) to (2-68),

7. The resist underlayer film composition according to claim 1, wherein the compound shown by the general formula (1) has a minimum complex viscosity of 10 Pa·

s or less when the complex viscosity is measured within a range of 50°

C. to 300°

C.

8. The resist underlayer film composition according to claim 1, wherein the compound shown by the general formula (1) has a complex viscosity of 1,000 Pa·

s or less at 100°

C.

9. The resist underlayer film composition according to claim 1, further comprising:

(A′

) a compound shown by the following general formula (3),

W

X²)_n  

 

(3)

wherein W and “

n”

are as defined above, X² represents a monovalent organic group shown by the following general formula (3X),

10. The resist underlayer film composition according to claim 9, wherein Z in the general formula (3X) is a group shown by the following general formula (1Z),

11. The resist underlayer film composition according to claim 9, wherein in the general formula (3X), Z is a group shown by the following general formula (2Z), and Y is a carbonyl group,

12. The resist underlayer film composition according to claim 9, wherein the compound shown by the general formula (3) comprises a compound shown by any one of the following general formulae (4-1) to (4-68),

13. The resist underlayer film composition according to claim 1, wherein (B) the organic solvent is a mixture of one or more organic solvents having a boiling point of lower than 180°

C. and one or more organic solvents having a boiling point of 180°

C. or higher.

14. The resist underlayer film composition according to claim 1, further comprising:

(C) a liquid polyfunctional acrylate compound having a boiling point of 200°

C. or higher.

15. The resist underlayer film composition according to claim 14, wherein the component (C) is a polyacrylate of an acyclic polyol.

16. The resist underlayer film composition according to claim 1, further comprising one or more of (D) an acid generator, (E) a surfactant, (F) a crosslinking agent, (G) a plasticizer, (H) a colorant, (I) a photo-polymerization initiator, (J) a sensitizer, or (K) a stabilizer.

17. A patterning process for forming a pattern in a substrate to be processed, the patterning process comprising the steps of:

(I-1) applying the resist underlayer film composition according to claim 1 on a substrate to be processed and irradiating the composition with a high energy beam to form a resist underlayer film;

(I-2) forming a resist upper layer film on the resist underlayer film by using a resist upper layer film material composed of a photoresist composition;

(I-3) subjecting the resist upper layer film to pattern exposure and development with a developer to form a pattern in the resist upper layer film; and

(I-4) transferring the pattern to the resist underlayer film by dry etching using the resist upper layer film having the formed pattern as a mask.

18. A patterning process for forming a pattern in a substrate to be processed, the patterning process comprising the steps of:

(II-1) applying the resist underlayer film composition according to claim 1 on a substrate to be processed and irradiating the composition with a high energy beam to form a resist underlayer film;

(II-2) forming a resist middle layer film on the resist underlayer film;

(II-3) forming a resist upper layer film on the resist middle layer film by using a resist upper layer film material composed of a photoresist composition;

(II-4) subjecting the resist upper layer film to pattern exposure and development with a developer to form a pattern in the resist upper layer film;

(II-5) transferring the pattern to the resist middle layer film by dry etching using the resist upper layer film having the formed pattern as a mask; and

(II-6) transferring the pattern to the resist underlayer film by dry etching using the resist middle layer film having the transferred pattern as a mask.

19. A patterning process for forming a pattern in a substrate to be processed, the patterning process comprising the steps of:

(III-1) applying the resist underlayer film composition according to claim 1 on a substrate to be processed and irradiating the composition with a high energy beam to form a resist underlayer film;

(III-2) forming an inorganic hard mask intermediate film selected from a silicon oxide film, a silicon nitride film, or a silicon oxynitride film on the resist underlayer film;

(III-3) forming an organic anti-reflective film on the inorganic hard mask intermediate film;

(III-4) forming a resist upper layer film on the organic anti-reflective film by using a resist upper layer film material composed of a photoresist composition;

(III-5) subjecting the resist upper layer film to pattern exposure and development with a developer to form a pattern in the resist upper layer film;

(III-6) transferring the pattern to the organic anti-reflective film and the inorganic hard mask intermediate film by dry etching using the resist upper layer film having the formed pattern as a mask; and

(III-7) transferring the pattern to the resist underlayer film by dry etching using the inorganic hard mask intermediate film having the transferred pattern as a mask.

20. The patterning process according to claim 18, wherein the resist underlayer film is formed by applying the resist underlayer film composition on the substrate to be processed, performing a heat treatment at 50°

C. to 300°

C. for 10 to 600 seconds, and then irradiating the composition with the high energy beam.

21. The patterning process according to claim 18, wherein the resist underlayer film is formed by applying the resist underlayer film composition on the substrate to be processed, and irradiating the composition with the high energy beam without a heat treatment.

22. The patterning process according to claim 18, wherein the substrate to be processed is a substrate having a structure or a step with a height of 30 nm or more.

23. The patterning process according to claim 18, wherein a light source of the high energy beam is a xenon excimer lamp.

24. A method for forming a resist underlayer film, the method comprising:

applying the resist underlayer film composition according to claim 1 on a substrate to be processed;

subjecting the resist underlayer film composition to a heat treatment at 50°

C. to 300°

C. for 10 to 600 seconds; and

then irradiating the composition with a high energy beam to form a cured film.

25. A method for forming a resist underlayer film, the method comprising:

applying the resist underlayer film composition according to claim 1 on a substrate to be processed; and

irradiating the composition with a high energy beam to form a cured film without a heat treatment.

26. The method for forming a resist underlayer film according to claim 24, wherein the substrate to be processed is a substrate having a structure or a step with a height of 30 nm or more.

27. The method for forming a resist underlayer film according to claim 24, wherein a light source of the high energy beam is a xenon excimer lamp.

28. A compound for a resist underlayer film composition, shown by the following general formula (1),

W

X)_n  

 

(1)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms;

X represents a monovalent, organic, group shown by the following general formula (1X); and

“

n”

represents an integer of 1 to 10,

29. The compound for a resist underlayer film composition according to claim 28, wherein the compound shown by the general formula (1) comprises a compound shown by any one of the following general formulae (2-1) to (2-68),

30. A compound for a resist underlayer film composition, shown by the following general formula (1′

),

W

X′

)_n  

 

(1′

)

wherein W represents an n-valent organic group having 2 to 50 carbon atoms;

X′

represents a monovalent organic group shown by the following general formula (1X′

); and

“

n”

represents an integer of 1 to 10,

31. The compound for a resist underlayer film composition according to claim 30, wherein the compound shown by the general formula (1′

) comprises a compound shown by any one of the following general formulae (5-1) to (5-68),