SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- an insulating layer;
a first oxide semiconductor film having conductivity;
a transistor including a second oxide semiconductor film; and
a first conductive film in contact with the first oxide semiconductor film and the second oxide semiconductor film,wherein the first conductive film includes a Cu—
X alloy film and a Cu film over the Cu—
X alloy film,wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti,wherein the first oxide semiconductor film has conductivity,wherein a hydrogen concentration of the first oxide semiconductor film is higher than or equal to 8×
1019 atoms/cm3,wherein a hydrogen concentration of the second oxide semiconductor film is lower than or equal to 5×
1019 atoms/cm3,wherein a resistivity of the first oxide semiconductor film is higher than or equal to 1×
10−
8 times and lower than 1×
10−
1 times a resistivity of the second oxide semiconductor film,wherein the first oxide semiconductor film having conductivity is over and in contact with the insulating layer, andwherein the insulating layer includes hydrogen.
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Abstract
A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).
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Citations
8 Claims
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1. A semiconductor device comprising:
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an insulating layer; a first oxide semiconductor film having conductivity; a transistor including a second oxide semiconductor film; and a first conductive film in contact with the first oxide semiconductor film and the second oxide semiconductor film, wherein the first conductive film includes a Cu—
X alloy film and a Cu film over the Cu—
X alloy film,wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti, wherein the first oxide semiconductor film has conductivity, wherein a hydrogen concentration of the first oxide semiconductor film is higher than or equal to 8×
1019 atoms/cm3,wherein a hydrogen concentration of the second oxide semiconductor film is lower than or equal to 5×
1019 atoms/cm3,wherein a resistivity of the first oxide semiconductor film is higher than or equal to 1×
10−
8 times and lower than 1×
10−
1 times a resistivity of the second oxide semiconductor film,wherein the first oxide semiconductor film having conductivity is over and in contact with the insulating layer, and wherein the insulating layer includes hydrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification