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SEMICONDUCTOR DEVICE

  • US 20180012912A1
  • Filed: 09/07/2017
  • Published: 01/11/2018
  • Est. Priority Date: 11/29/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an insulating layer;

    a first oxide semiconductor film having conductivity;

    a transistor including a second oxide semiconductor film; and

    a first conductive film in contact with the first oxide semiconductor film and the second oxide semiconductor film,wherein the first conductive film includes a Cu—

    X alloy film and a Cu film over the Cu—

    X alloy film,wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti,wherein the first oxide semiconductor film has conductivity,wherein a hydrogen concentration of the first oxide semiconductor film is higher than or equal to 8×

    1019 atoms/cm3,wherein a hydrogen concentration of the second oxide semiconductor film is lower than or equal to 5×

    1019 atoms/cm3,wherein a resistivity of the first oxide semiconductor film is higher than or equal to 1×

    10

    8
    times and lower than 1×

    10

    1
    times a resistivity of the second oxide semiconductor film,wherein the first oxide semiconductor film having conductivity is over and in contact with the insulating layer, andwherein the insulating layer includes hydrogen.

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