SEMICONDUCTOR DEVICE

• US 20180012912A1
• Filed: 09/07/2017
• Published: 01/11/2018
• Est. Priority Date: 11/29/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, KOEZUKA, Junichi, SHIMA, Yukinori, JINTYOU, Masami, HAMOCHI, Takashi, HIGANO, Satoshi, HOSAKA, Yasuharu, OBONAI, Toshimitsu
• Granted Patent: US 11,430,817 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 28/24 with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

Claims

1. A semiconductor device comprising:

an insulating layer;

a first oxide semiconductor film having conductivity;

a transistor including a second oxide semiconductor film; and

a first conductive film in contact with the first oxide semiconductor film and the second oxide semiconductor film,

wherein the first conductive film includes a Cu—

X alloy film and a Cu film over the Cu—

X alloy film,

wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti,

wherein the first oxide semiconductor film has conductivity,

wherein a hydrogen concentration of the first oxide semiconductor film is higher than or equal to 8×

10¹⁹ atoms/cm³,

wherein a hydrogen concentration of the second oxide semiconductor film is lower than or equal to 5×

10¹⁹ atoms/cm³,

wherein a resistivity of the first oxide semiconductor film is higher than or equal to 1×

10<sup>−

8</sup> times and lower than 1×

10<sup>−

1</sup> times a resistivity of the second oxide semiconductor film,

wherein the first oxide semiconductor film having conductivity is over and in contact with the insulating layer, and

wherein the insulating layer includes hydrogen.

2. The semiconductor device according to claim 1, wherein the resistivity of the first oxide semiconductor film is higher than or equal to 1×

10<sup>−

3</sup> Ω

cm and lower than 1×

10⁴Ω

cm.

3. The semiconductor device according to claim 1, wherein the first conductive film includes a Cu—

Mn alloy film.

4. The semiconductor device according to claim 3,

wherein a part of the Cu film is covered with a film including manganese oxide, and

wherein the part of the Cu film is in contact with the film including manganese oxide.

5. The semiconductor device according to claim 1,

wherein the first oxide semiconductor film includes hydrogen and an oxygen vacancy, and

wherein the hydrogen is located in the oxygen vacancy.

6. The semiconductor device according to claim 1, further comprising a capacitor,

wherein the capacitor includes the first oxide semiconductor film, the first conductive film, an insulating film, and a second conductive film,

wherein the insulating film is over the first oxide semiconductor film and the first conductive film, and

wherein the second conductive film is over the insulating film and overlaps with the first oxide semiconductor film.

7. The semiconductor device according to claim 6, wherein the insulating film is a nitride insulating film.

8. The semiconductor device according to claim 1, wherein the hydrogen concentration of the first oxide semiconductor film having conductivity is higher than or equal to 5×

10²⁰ atoms/cm³.